Method for providing a planarizable workpiece support, a workpiece planarization arrangement, and a chuck

ABSTRACT

According to various embodiments, a workpiece planarization arrangement may include: a chuck including at least one portion configured to support one or more workpieces; and a planarization tool configured to planarize the at least one portion of the chuck and to planarize one or more workpieces on the at least one portion of the chuck; wherein the at least one portion of the chuck includes at least one of particles, pores and/or a polymer.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation-in-part of U.S. application Ser. No.15/065,914, filed on Mar. 10, 2016, the entire contents of which arehereby incorporated herein by reference.

TECHNICAL FIELD

Various embodiments relate generally to a method for providing aplanarizable workpiece support, a workpiece planarization arrangement,and a chuck.

BACKGROUND

In general, semiconductor materials may be processed in semiconductortechnology on or in a substrate (also referred to as a wafer or acarrier), e.g. to fabricate integrated circuits (also referred to aschips). During processing the semiconductor material, certain processsteps may be applied, such as thinning the wafer, doping a semiconductormaterial, or forming one or more layers over the wafer.

Conventionally, the wafer is thinned to remove excess material from thebackside of the integrated circuits until the integrated circuits have apredefined thickness, which influences their electronic efficiency. Fora precise thinning of all integrated circuits to the same thickness, theintegrated circuits may need to be aligned parallel to a thinning plane.To align the integrated circuits, the wafer may be incorporated into aplanarization package, which is planarized to provide two almostplane-parallel surfaces, which enable a precise thinning of allintegrated circuits of the wafer.

For minimizing a deviation of the two almost plane-parallel surfaces,the chuck on which the planarization package is disposed duringplanarization may be adjusted to the plane in which the planarizationpackage is planarized. During this process, the chuck may be alignedplane-parallel to the planarization plane by a self-planarizationprocess.

Conventionally, the self-planarization process is limited in itspreciseness due to inherent technological variations of the processitself. Therefore, the almost plane-parallel surfaces of theplanarization package may deviate from each other up to the maximumpreciseness of the self-planarization process. Minimizing variations inthe resulting thickness of the integrated circuits (also referred to astotal thickness variation) may thus be limited, e.g. to more than about2 μm in case of a 300 mm wafer diameter. The total thickness variationmay not be accessible for subsequent corrections, and may be transferredinto further process steps. By way of example, a stability of the totalthickness variation for the readily fabricated chips may be limited toabout ±3 μm, e.g., measured across a plurality of processed wafers or aplurality of processed chips in a wafer.

SUMMARY

According to various embodiments, a workpiece planarization arrangementmay include: a chuck including at least one portion configured tosupport one or more workpieces; and a planarization tool configured toplanarize the at least one portion of the chuck and to planarize one ormore workpieces on the at least one portion of the chuck; wherein the atleast one portion of the chuck includes at least one of particles, poresand/or a polymer.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, like reference characters generally refer to the sameparts throughout the different views. The drawings are not necessarilyto scale, emphasis instead generally being placed upon illustrating theprinciples of the invention. In the following description, variousembodiments of the invention are described with reference to thefollowing drawings, in which:

FIG. 1 shows a workpiece planarization arrangement in a schematic topview according to various embodiments;

FIGS. 2 to 4 respectively show workpiece planarization arrangement in aschematic cross sectional view or side view according to variousembodiments;

FIG. 5 shows a chuck in a schematic cross sectional view according tovarious embodiments;

FIG. 6A and FIG. 6B respectively show a chuck or a workpiece-support ina schematic view according to various embodiments;

FIG. 7A and FIG. 7B respectively show a chuck or a workpiece-support ina schematic view according to various embodiments;

FIG. 8A shows a workpiece-support in a schematic cross sectional viewaccording to various embodiments;

FIG. 8B and FIG. 9 respectively show a chuck in a schematic crosssectional view according to various embodiments;

FIG. 10A show a replaceable workpiece-support in a schematic crosssectional view and FIG. 10B shows the replaceable workpiece-support in acorresponding top view according to various embodiments;

FIG. 11 and FIG. 12 respectively show a method in a schematic flowdiagram according to various embodiments;

FIG. 13A and FIG. 13B respectively show a workpiece planarizationarrangement in a schematic cross sectional view according to variousembodiments;

FIG. 14 to FIG. 16 respectively show a method in a schematic flowdiagram according to various embodiments;

FIG. 17A and FIG. 17B respectively show a chuck or a workpiece-supportin a schematic perspective view according to various embodiments;

FIG. 18 shows a chuck in a schematically cross sectional view or sideview according to various embodiments;

FIG. 19 to FIG. 20 respectively show a method in a schematic crosssectional view or side view according to various embodiments;

FIG. 21A and FIG. 21B respectively show a workpiece-support in aschematic perspective view according to various embodiments;

FIG. 22A and FIG. 22B respectively show a workpiece planarizationarrangement in various schematic views according to various embodiments;and

FIG. 23A to FIG. 23C respectively show a workpiece-support in a methodaccording to various embodiments in a schematic cross sectional view orside view.

DESCRIPTION

The following detailed description refers to the accompanying drawingsthat show, by way of illustration, specific details and embodiments inwhich the invention may be practiced.

The word “exemplary” is used herein to mean “serving as an example,instance, or illustration”. Any embodiment or design described herein as“exemplary” is not necessarily to be construed as preferred oradvantageous over other embodiments or designs.

The word “over” used with regards to a deposited material formed “over”a side or surface, may be used herein to mean that the depositedmaterial may be formed “directly on”, e.g. in direct contact with, theimplied side or surface. The word “over” used with regards to adeposited material formed “over” a side or surface, may be used hereinto mean that the deposited material may be formed “indirectly on” theimplied side or surface with one or more additional layers beingarranged between the implied side or surface and the deposited material.

The term “lateral” used with regards to the “lateral” extension of astructure (or of a substrate, a wafer, or a support carrier) or“laterally” next to, may be used herein to mean an extension or apositional relationship along a surface of a substrate, a wafer, or asupport carrier. That means that a surface of a substrate (e.g. asurface of a support carrier, or a surface of a wafer) may serve asreference, commonly referred to as the main processing surface of thesubstrate (or the main processing surface of the support carrier orwafer). Further, the term “width” used with regards to a “width” of astructure (or of a structure element) may be used herein to mean thelateral extension of a structure. Further, the term “height” used withregards to a height of a structure (or of a structure element), may beused herein to mean an extension of a structure along a directionperpendicular to the surface of a substrate (e.g. perpendicular to themain processing surface of a substrate). The term “thickness” used withregards to a “thickness” of a layer may be used herein to mean thespatial extension of the layer perpendicular to the surface of thesupport (the material) on which the layer is deposited. If the surfaceof the support is parallel to the surface of the substrate (e.g. to themain processing surface) the “thickness” of the layer deposited on thesupport may be the same as the height of the layer. Further, a“vertical” structure may be referred to as a structure extending in adirection perpendicular to the lateral direction (e.g. perpendicular tothe main processing surface of a substrate) and a “vertical” extensionmay be referred to as an extension along a direction perpendicular tothe lateral direction (e.g. an extension perpendicular to the mainprocessing surface of a substrate).

According to various embodiments, at least one of a substrate (alsoreferred to as wafer) and a semiconductor region may include or beformed from a semiconductor material of various types, including a groupIV semiconductor (e.g. silicon or germanium), a compound semiconductor,e.g. a group III-V compound semiconductor (e.g. gallium arsenide orgallium nitride) or other types, including group III semiconductors,group V semiconductors, group IV-IV semiconductors (e.g. siliconcarbide) or polymers, for example. In an embodiment, at least one of thesubstrate and the semiconductor region is made of silicon (doped orundoped), in an alternative embodiment, at least one of the substrateand the semiconductor region is a silicon on insulator (SOI) wafer. Asan alternative, any other suitable semiconductor material can be usedfor at least one of the substrate and the semiconductor region, forexample a semiconductor compound material such as gallium phosphide(GaP), indium phosphide (InP), but also any suitable ternarysemiconductor compound material or quaternary semiconductor compoundmaterial such as indium gallium arsenide (InGaAs).

According to various embodiments, at least one of the wafer and thesemiconductor region may be processed to form one or more semiconductorchips at least one of in or over the semiconductor region or therespective wafer. A semiconductor chip may include an active chip area.The active chip area may be disposed in a semiconductor region of thewafer and may include one or more semiconductor circuit elements like atransistor, a resistor, a capacitor, a diode or the like. The one ormore semiconductor circuit elements may be configured to performcomputing or storage operations. Alternatively or additionally, the oneor more semiconductor circuit elements may be configured to performswitching or rectifying operations, e.g. in power electronics (e.g.,using one or more power semiconductor circuit elements).

Various semiconductor circuit elements, like at least one of atransistor and a diode, may be configured for high voltage applications(also referred to as high voltage diode or high voltage transistor,respectively). Alternatively or additionally, various semiconductorcircuit elements, like at least one of a transistor and a diode, may beconfigured to be emitter controlled (also referred to as EMCON). Varioussemiconductor circuit elements may be a power semiconductor circuitelement.

According to various embodiments, a transistor may be one of varioustypes of transistors, such as among others a bipolar transistor (BJT), aheterojunction BJT, a Schottky BJT, an insulated-gate BJT (also referredto as IGBT), a field-effect transistor (FET), a junction field-effecttransistor, a metal-oxide-semiconductor field-effect transistor(MOSFET), a dual-gate MOSFET, a fast-reverse or fast-recovery epitaxialdiode FET, a heterostructure insulated gate FET, a modulation-doped FET,a tunnel FET.

According to various embodiments, a semiconductor chip may be singulatedfrom the wafer by removing material from a kerf region of the wafer(also called dicing or cutting the wafer). For example, removingmaterial from the kerf region may be processed by scribing and breaking,cleavage, blade dicing, plasma dicing, laser sawing or mechanical sawing(e.g. using a dicing saw). After singulating the semiconductor chip, itmay be electrically contacted and encapsulated, e.g. by mold materials,into a chip carrier (also called a chip housing) which may then besuitable for use in electronic devices. For example, the semiconductorchip may be bonded to a chip carrier by wires, and the chip carrier maybe soldered onto a printed circuit board and/or onto a lead frame (e.g.,an IGBT or a power MOSFET).

According to various embodiments, a method for planarizing one or moreworkpieces, a workpiece planarization arrangement, a chuck and areplaceable workpiece-support (e.g. for a chuck) are provided. The oneor more workpieces (in other words, the workpiece or each workpiece) maybe a planarization package including the wafer and sacrificial material(e.g. in form of a sacrificial foil). It might be understood herein thatalso other workpieces may be processed.

According to various embodiments, it was realized that aself-planarization process of a chuck is limited in its preciseness dueto the material chosen conventionally for the chuck. A conventionalchuck is made from steel and coated by a nickel phosphor alloy. For theself-planarization process, a portion of the nickel phosphor coating isremoved (e.g. about 3 μm to 10 μm per self-planarization). The nickelphosphor coating is substantially harder than the planarization package,which makes it necessary for the conventional self-planarizationprocess, to modify the configuration of the whole device (e.g. changingthe machining bit, machining slower, rotating slower), resulting in thatat least one of thermal and mechanical conditions are different fromplanarizing one or more workpieces (e.g. the planarization package).This difference substantially influences the planarization planes inboth configurations, such that they differ from each other. Further, theconventional self-planarization requires a long tool downtime (e.g. morethan 4 to 5 hours). Frequent vacuum errors may occur during theconventional self-planarization.

Further, when the nickel phosphor coating is depleted, the chuck has tobe replaced, which is very cost intensive. Due to the modification ofthe device and the limited thickness of the nickel phosphor coating, thenumber of self-planarization processes in total and/or per time islimited. Therefore, the plane-parallel alignment is vulnerable toparticle contamination of the chuck, in particular if the particles arenot removable by a destruction free cleaning.

Various embodiments provide a new chuck-design for tape-planarization.Various embodiments provide an inlay (e.g., made of a synthetic materialsuch as, e.g., PET) for a chuck (e.g. a wafer chuck). The inlay may bean inexpensive part, which may be changed after several self-cuts.Various embodiments provide an inlay disc, e.g. including grooves.

According to various embodiments, the chuck is configured such that itcan be self-planarized in at least one of the same physicalconfiguration and using the same machining bit as the one or moreworkpieces (e.g., in almost the same machining bit configuration).Therefore, no difference may occur in the planarization planes for both,planarizing the one or more workpieces and the chuck, such that theyinclude identical planarization planes. Illustratively, the chuck mayinclude a material similar to the workpiece or each workpiece (e.g. thesacrificial material), such that the chuck is processible under at leastone of the same physical configuration and using the same machining bitas the workpiece or each workpiece. By way of example, the chuck mayinclude or be formed from a polymer (e.g. polyethylene terephthalate)having an elasticity module, which is configured such that the chuck andthe one or more workpieces can be planarized under the same conditions.

Compared to conventional chucks (e.g. having a nickel phosphor coating)the following may be provided:

-   -   the process parameter for planarizing one or more workpieces and        the chuck (also referred to as self-cut) may be similar, e.g.        equal. Thermal influences (e.g. stress) during planarizing the        one or more workpieces and the chuck may be similar, e.g. equal;    -   a total thickness variation may be reduced to less than about 2        μm, e.g., less than about 1 μm, e.g. less than about 0.5 μm,        e.g. less than about 0.2 μm; alternatively or additionally, the        total thickness variation may be maintained stable (e.g.,        reproducible) across processing more than one wafer, e.g., more        than 10 wafers, e.g., more than 100 wafers;    -   the workpiece planarization arrangement may be used in at least        one of the same physical configuration and same machining bit        (e.g., in the same configuration, also referred to as machining        bit configuration). In other words, it is not necessary to        modify the workpiece planarization arrangement while changing        between planarizing the one or more workpieces and planarizing        the chuck;    -   reducing (e.g. avoiding) wear of the diamond bit and reducing        (e.g. avoiding) damages to the diamond bit (during        self-planarization);    -   reducing (e.g. avoiding) maintenance intervention        (illustratively, the self-planarization may be performed in a        standard configuration);    -   reduce the tool downtime (e.g. to less than several minutes);    -   reduce cost due to inlay-replacement;    -   The chuck may be self-planarized (also referred to as self-cut)        more frequently, e.g. more than monthly, e.g., more than weekly,        e.g., more than daily, e.g. more than hourly, e.g. in accordance        to a predetermined frequency;    -   increased stability of at least one of the integrated circuit        fabrication and the integrated circuit fabrication system;    -   reducing the effort for maintenance and service;    -   reducing the attrition of the machining bit;    -   if contamination with particles is recognized, a        self-planarization can be performed (e.g. an automatic control        may be provided);    -   a risk for contaminations on at least one of the chuck and the        integrated circuits may be reduced; and    -   a stability of the vacuum during processing the one or more        workpieces (e.g. including the wafer) may be enhanced.

According to various embodiments, a total thickness variation of a waferand/or integrated circuits may be improved. Illustratively, a workpieceplanarization arrangement is provided which enables to reduce thethickness variations to less than 1 μm, for example, e.g. in case of a300 mm wafer diameter. This may increase the reproducibility of thethinning process, reduce the number of defective integrated circuits,and increase the quality of the integrated circuits.

FIG. 1 illustrates a workpiece planarization arrangement 100 in aschematic top view according to various embodiments.

The workpiece planarization arrangement 100 may include a chuck 102 andoptionally one or more workpieces 106 disposed thereon. Further, theworkpiece planarization arrangement 100 may include a planarization tool104.

The planarization tool 104 may include a bit carrier 104 c rotatable 101r about a rotation axis 101 a. Further, the planarization tool 104 mayinclude a machining bit 104 b mounted on the bit carrier 104 c. Themachining bit 104 b may include or be formed from a tip. Alternativelyor additionally, the machining bit 104 b may include or be formed from ablade.

The rotatable 101 r bit carrier 104 c and the chuck 102 may beconfigured for an at least two-axis displacement to each other. A firstaxis 101 of the two-axis displacement may be parallel to the rotationaxis 101 a. A second axis 103 of the two-axis displacement may beperpendicular to the rotation axis 101 a. The rotatable bit carrier 104c and the chuck 102 may be configured for at least one of a firstdisplacement 101 d along the first axis 101 (see also FIG. 2) and asecond displacement 103 d the second axis 103. Optionally, the rotatablebit carrier 104 c and the chuck 102 may be configured for a displacementalong a third axis 105 perpendicular to both, the first axis 101 and thesecond axis 103.

A speed of rotating the bit carrier 104 c and/or revolving the machiningbit 104 b may be in the range from about 500 rounds per minute to about5000 rounds per minute, e.g. in the range from about 1000 rounds perminute to about 3000 rounds per minute, e.g. about 2000 rounds perminute.

A speed of the second displacement 103 d may be in the range from about0.1 mm per second to about 20 mm per second (mm/s), e.g., in the rangefrom about 0.1 mm per second to about 5 mm per second, e.g. in the rangefrom about 0.5 mm per second to about 2 mm per second, e.g. about 1 mmper second.

The workpiece planarization arrangement 100 may include or be formedfrom a fly-cutter (e.g. Disco DFS8960). The workpiece planarizationarrangement 100 may include a rotating spindle 104 c having a diamondtip 104 b. The rotating diamond tip 104 b may be configured to removematerial from the one or more workpieces 106, e.g. from a sacrificialfoil disposed on a wafer. The workpiece 106 or each workpiece 106 may beplanarized to provide one or more workpieces 106 having two surfacesplane-parallel to each other (also referred to as planarized workpieceor planarized workpieces). According to various embodiments, variationsduring the planarizing may be reduced.

FIG. 2 illustrates a workpiece planarization arrangement 200 in aschematic cross sectional view or side view according to variousembodiments (e.g. viewing along direction 105), e.g. the workpieceplanarization arrangement described before.

The bit carrier 104 c may include a bit socket 104 h (illustratively, ashank) for receiving the machining bit 104 b. The machining bit 104 bmay be replaceably mounted via the bit socket 104 h.

According to various embodiments, replaceably mounted may be understoodas configured for non-destructive assembly and disassembly, e.g. withoutdestroying or damaging the two parts replaceably mounted with eachother.

The rotatable bit carrier 104 c and the chuck 102 may be configured forphysically contacting the machining bit 104 b with at least one of thechuck 102 and the (or each) workpiece 106, e.g. by reducing a distancebetween the machining bit 104 b from at least one of the chuck 102 andthe workpiece 106 or each workpiece 106 (e.g. the first displacement 101d along the first axis 101) by the first displacement 101 d. For thefirst displacement 101 d, at least one of the chuck 102 and theplanarization tool 104 may be configured to move parallel to direction101 (e.g. parallel to axis 101 a). For the second displacement 103 d, atleast one of the chuck 102 and the planarization tool 104 may beconfigured to move parallel to direction 103 (e.g. perpendicular to axis101 a).

FIG. 3 illustrates a workpiece planarization arrangement 300 in aschematic cross sectional view according to various embodiments (e.g.viewing along direction 105).

The planarization tool 104 may be configured to planarize the workpiece106 or each workpiece 106 on the chuck 102. While the machining bit 104b is in physical contact with at least one of the chuck 102 and theworkpiece 106 or each workpiece 106, the machining bit 104 b may revolvearound the rotation axis 101 a. During physical contact, the workpiece106 or each workpiece 106 may be planarized by subtractive manufacturing(including at least one of cutting and machining).

The workpiece 106 or each workpiece 106 may include or be formed fromone or more layers, e.g. a plurality of layers (also referred to aslayer stack). The workpiece 106 or each workpiece 106 may include or beformed from at least one of the following layers: a first layer 106 f, asecond layer 106 s, a third layer 106 a and a fourth layer 106 w. Thefirst layer 106 f (also referred to as sacrificial layer 106 f orportion to be planarized) may include or be formed from a polymer, e.g.one or more polymer foils (also referred to as polymer film) and/or oneor more polymer tapes. A tape may be also referred to as a self-adhesivefoil.

The optional third layer 106 a (also referred to as adhesive layer 106a) may include or be formed from an adhesive polymer (e.g. imide). Thefourth layer 106 w (also referred to as semiconductor layer 106 w orwafer 106 w) may include or be formed from semiconductor material. Theoptional second layer 106 s (also referred to as stabilization layer 106s) may include or be formed from a material, which is more stable (e.g.,at least one of harder and thicker) than at least one of the first layer106 f and the fourth layer 106 w. For example, the fourth layer 106 wmay include or be formed from at least one of a ceramic, a metal and/ora glass. The optional second layer 106 s may be disposed between thefirst layer 106 f and the fourth layer 106 w. The first layer 106 f maybe adhered to the second layer 106 s (if present).

According to various embodiments, at least the first layer 106 of theworkpiece 106 or each workpiece 106 may be subtractively manufactured bythe machining bit 104 b. By subtractive manufacturing, a planarizedsurface 106 p of the workpiece 106 or each workpiece 106 may be formed.The planarized surface 106 p of the workpiece 106 or each workpiece 106may be plane-parallel to a surface 106 b of the wafer 106 w which is incontact to the chuck 102 (opposite the first layer 106 f).

The wafer 106 may include one or more integrated circuits 106 c, e.g.each including or formed from a chip, a transistor, a diode, e.g. inform of power integrated circuits 106 c. The one or more integratedcircuits 106 c may each include a plurality of doped semiconductorregions. The one or more integrated circuits 106 c may be covered by thefirst layer 106 f, optionally the second layer 106 s, and optionally thethird layer 106 a.

The first layer 106 f may be planarized (smoothed and aligned) byrotating 101 r the bit carrier 104 c having the machining bit 104 b.According to various embodiments, a mechanical hardness of the machiningbit 104 b may be more than (e.g. about 200%, or about 500% of) amechanical hardness of the workpiece 106 or each workpiece 106, forexample, a mechanical hardness of at least one of the first layer 106 f,the second layer 106 s, the third layer 106 a, and the fourth layer 106w.

According to various embodiments, the machining bit 104 b may include orbe formed from carbon, e.g. in at least one of a diamond configurationand a diamond-like carbon configuration. Alternatively or additionally,the machining bit 104 b may include or be formed from at least one of acarbide and a nitride (e.g. metal carbide like tungsten carbide and/or ametal nitride).

For example, the machining bit 104 b may include or be formed from aceramic. A ceramic may be understood as an inorganic, nonmetallic solidmaterial, e.g., including metal, nonmetal and/or metalloid atomsprimarily held in ionic and covalent bonds. For example, the ceramic mayinclude or be formed from a carbide (for example, a metal carbide), anitride (for example, a metal nitride) and an oxide (for example, ametal oxide like aluminum oxide, e.g., Corundum).

A mechanical hardness of the machining bit 104 may be a Mohs Hardness ofmore than about 4 (corresponding to a Vickers Hardness of more thanabout 189 and a Rockwell B Hardness of more than about 92 and a RockwellC Hardness of more than about 13), e.g. of more than or equal to about5, e.g. of more than or equal to about 6, e.g. of more than or equal toabout 7, e.g. of more than or equal to about 8, e.g. of more than orequal to about 9, e.g. of more than or equal to about 9.5.

Illustratively, after planarization, the front-surface 106 p and therear-surface 106 b are plane-parallel.

In various embodiments, the first layer 106 f may include or be formedfrom a polymer foil. In various embodiments, the second layer 106 s mayinclude or be formed from a glass plate. In various embodiments, thethird layer 106 a may include or be formed from a polymer adhesive. Invarious embodiments, the fourth layer 106 w may include or be formedfrom a semiconductor substrate.

In an optional embodiment, the first layer 106 f may be attached to thefourth layer 106 w (e.g., in direct physical contact or having anadhesive therebetween). For example, the polymer foil may be directlycontacted to the semiconductor substrate (e.g., if using a self-adhesivefoil).

FIG. 4 illustrates a workpiece planarization arrangement 400 in aschematic cross sectional view according to various embodiments (e.g.viewing along direction 105).

The workpiece planarization arrangement 400 may include the chuck 102.The chuck 102 may include or be formed from a support carrier 102 c anda workpiece-support 102 s. The workpiece-support 102 s may be configuredto receive the one or more workpieces 106. For example, the workpiece106 or each workpiece 106 may be disposed at least one of in and on theworkpiece-support 102 s. By way of example, the workpiece 106 or eachworkpiece 106 may be replaceably mounted to the workpiece-support 102 s(also referred to as inlay), e.g. attached by at least one of adhesion,fastening (e.g. by pins, screws, or the like) and form fit.Alternatively or additionally, at least one of an electrostatic adhesionand a pneumatic adhesion may be used to mount the workpiece-support 102s. The pneumatic adhesion may be provided by at least one of forming andmaintaining a vacuum between the workpiece 106 or each workpiece 106 andthe workpiece-support 102 s.

A thickness of the workpiece-support 102 s (extension parallel to therotation axis 101 a) may be more than about 10 micrometer (μm), e.g.more than about 100 μm, e.g. more than about 250 μm, e.g. more thanabout 500 μm, e.g. more than about 1 millimeter (mm), e.g. more thanabout 10 mm.

According to various embodiments, the support carrier 102 c may includeor be formed from a metallic material, e.g. stainless steel. Accordingto various embodiments, a metallic material may include or be formedfrom at least one chemical element of the following group of chemicalelements (also referred to as metals): tungsten (W), aluminum (Al),copper (Cu), nickel (Ni), magnesium (Mg), chromium (Cr), iron (Fe), zinc(Zn), tin (Sn), gold (Au), silver (Ag), iridium (Ir), platinum (Pt),indium (In), cadmium (Cd), bismuth (Bi), vanadium (V), titanium (Ti),palladium (Pd), or zirconium (Zr) or a metal alloy including at leastone chemical element of the group of chemical elements. By way ofexample, a metal alloy may include or be formed from at least two metals(e.g. two or more than two metals, e.g. in the case of an intermetalliccompound) or at least one metal (e.g. one or more than one metal) and atleast one other chemical element (e.g. a non-metal or a half metal). Byway of example, a metal alloy may include or may be formed from at leastone metal and at least one non-metal (e.g. carbon (C) or nitrogen (N)),e.g. in the case of steel (e.g. stainless steel). By way of example, ametal alloy may include or may be formed from more than one metal (e.g.two or more metals), e.g. various compositions of gold with aluminum,various compositions of copper with aluminum, various compositions ofcopper and zinc (e.g. “brass”) or various compositions of copper and tin(e.g. “bronze”), e.g. including various intermetallic compounds.According to various embodiments, a metallic material may beelectrically conductive.

The workpiece-support 102 s may be replaceably mounted on the supportcarrier 102 c, e.g. by at least one of: adhesion, fastening (e.g. bypins, screws, or the like) and form fit. Alternatively or additionally,at least one of an electrostatic adhesion and a pneumatic adhesion maybe used. The pneumatic adhesion may be provided by at least one offorming and maintaining a vacuum between the workpiece-support 102 s andthe support carrier 102 c. According to various embodiments, replaceablymounted may be understood as configured for non-destructive assembly anddisassembly, e.g. without destroying or damaging the workpiece-support102 s and the support carrier 102 c.

Further, the workpiece planarization arrangement 400 may include theplanarization tool 104. The planarization tool 104 may be configured toplanarize the workpiece-support 102 s (illustratively, for adjusting thechuck by self-planarization) and to planarize one or more workpieceswhen disposed on the chuck 102.

The planarization tool 104 and the chuck 102 may be configured forphysically contacting the planarization tool 104 (e.g. its machining bit104 b) with the workpiece-support 102 s, e.g. by reducing a distancebetween the machining bit 104 b from the workpiece-support 102 s (by thedisplacement along the first axis 101) by the first displacement 101 d.For the first displacement 101 d at least one of the chuck 102 and theplanarization tool 104 may be configured to move along direction 101(e.g. parallel to axis 101 a).

The planarization tool 104 may be configured to planarize theworkpiece-support 102 s (also referred to as self-planarization). Whilethe machining bit 104 b is in physical contact with theworkpiece-support 102 s, the machining bit 104 b may revolve around therotation axis 101 a. Due to the physical contact, at least one portion102 p of the workpiece-support 102 s may be subtractively manufactured(including at least one of cutting and machining) by the planarizationtool 104, thereby forming a planarized surface 122 p of theworkpiece-support 102 s. The at least one portion 102 p of theworkpiece-support 102 s (planarized or to be planarized) may be alsoreferred to as sacrificial support region 102 p. The planarized surface102 s of the workpiece-support 102 s may be plane-parallel to aplanarizing plane defined by the planarization tool 104.

A mechanical hardness of the sacrificial support region 102 p (alsoreferred to as sacrificial portion 102 p of the workpiece-support 102 s)may be less than (e.g. about 75%, about 50%, about 25%, about 10%, about5% or about 2% of) a mechanical hardness of at least one of the supportcarrier 102 c and the machining bit 104 b. Alternatively oradditionally, the mechanical hardness of the support carrier 102 c maybe less than (e.g. about 75%, about 50%, about 25%, about 10%, about 5%or about 2% of) the mechanical hardness of the machining bit 104 b. Inother words, the mechanical hardness of the machining bit 104 b may begreater (more) than the mechanical hardness of at least one of thesupport carrier 102 c and the sacrificial support region 102 p.

During planarizing the one or more workpieces 106, at least one portion106 f of the workpiece 106 may be subtractively manufactured by theplanarization tool 104. The at least one portion 106 f of the workpiece106 or each workpiece 106 (planarized or to be planarized) may be alsoreferred to as sacrificial workpiece region 106 f.

According to various embodiments, the mechanical hardness of thesacrificial support region 102 p may be within a range of about 20% toabout 500% of the mechanical hardness of the sacrificial workpieceregion 106 f (e.g. the first layer 106 f), e.g. within a range of about50% to about 200% of the mechanical hardness of the sacrificialworkpiece region 106 f. Alternatively or additionally, the mechanicalhardness of the sacrificial support region 102 p may be less than (e.g.about 75%, about 50%, about 25%, about 10%, about 5% or about 2% of) amechanical hardness of at least one of a nickel-based alloy (e.g.fabricated by electroless nickel plating), e.g. a nickel-phosphorusalloy, and an iron-based alloy, e.g. steel. The mechanical hardness ofthe nickel-based alloy (e.g. a Rockwell C Hardness of more than about50, corresponding to a Brinell Hardness of more than about 469) may bemore than the mechanical hardness of the iron-based alloy (e.g. aRockwell C Hardness of more than about 25, corresponding to a BrinellHardness of more than about 250). A metal-based alloy may refer to analloy including more than about 50 atomic percent of the metal, e.g.more than about 70 atomic percent of the metal, e.g. more than about 80atomic percent of the metal, e.g. more than about 90 atomic percent ofthe metal.

The mechanical hardness of at least one of the sacrificial supportregion 102 p, the one or more workpieces 106, the chuck 102, the supportcarrier 102 c and the workpiece-support 102 s may be less than (e.g.about 75%, about 50%, about 25%, about 10%, about 5% or about 2% of) amechanical hardness of the machining bit 104.

According to various embodiments, the workpiece-support 102 s maycompletely made from the sacrificial support region 102 p.Alternatively, the sacrificial support region 102 p may be distant fromthe support carrier 102 c. By way of example, the sacrificial supportregion 102 p may include or be formed from at least one layer (see forexample, FIG. 8), e.g. at least one of a foil and a plate.

According to various embodiments, the mechanical hardness (simplifiedalso referred to as hardness) may be understood as a measure of howresistant a solid material or body is to various kinds of permanentshape change when a compressive force is applied.

The mechanical hardness of a body or material may be dependent on atleast one of ductility of the body or material, elastic stiffness of thebody or material, plasticity of the body or material, strain of the bodyor material, strength of the body or material, toughness of the body ormaterial, viscoelasticity of the body or material, and viscosity of thebody or material. A hard body or material may include or be formed fromceramics, certain metals, and metal compounds. A soft body or materialmay include or be formed a polymer, such as plastic. The hard body ormaterial may have a greater mechanical hardness than the soft body ormaterial.

According to various embodiments, the relations in mechanical hardnessmay be understood to refer to the same measurement method, e.g. to atleast one of an indentation hardness measurement and a scratch hardnessmeasurement. An indentation hardness measurement may reveal the hardnessof a material or body to deformation due to a constant compression loadfrom a standardized object, e.g. a sharp object. A scratch hardnessmeasurement may reveal the resistance of a material or body to fractureor permanent plastic deformation due to friction from a standardizedobject, e.g. a sharp object.

The mechanical hardness may refer to an indentation hardness, e.g. inaccordance to at least one of the following measurement methods:Rockwell Hardness (DIN EN ISO 6508-1), Martens-Hardness (DIN EN ISO14577), Brinell Hardness (EN ISO 6506-1 to EN ISO 6506-4), VickersHardness (DIN EN ISO 6507-1) and Shore Hardness (DIN EN ISO 868 and DINISO 7619-1). Alternatively or additionally, the mechanical hardness mayrefer to a scratch hardness, e.g. in accordance to the Mohs Scale (MohsHardness), or to a grinding hardness, e.g. in accordance to the RosiwalScale (Rosiwal Hardness). Rockwell Hardness may differ between RockwellB Hardness and Rockwell C Hardness.

The mechanical hardness of the sacrificial support region 102 p may be aVickers Hardness of less than or equal to 200, e.g. of less than orequal to about 150, e.g. of less than or equal to about 100, e.g. ofless than or equal to about 75, e.g. of less than or equal to about 50,e.g. of less than or equal to about 25, e.g. of less than or equal toabout 20, e.g. of less than or equal to about 10, e.g. of less than orequal to or equal to about 5, e.g. of less than or equal to about 2.5.

The mechanical hardness of the sacrificial support region 102 p may be aMohs Hardness of less than or equal to about 4 (corresponding to aVickers Hardness of less than or equal to about 189 and a Rockwell BHardness of less than or equal to about 92 and a Rockwell C Hardness ofless than or equal to about 13), e.g. of less than or equal to about 3(corresponding to a Vickers Hardness of less than or equal to about 109and a Rockwell B Hardness of less than or equal to about 61), e.g. ofless than or equal to about 2.5, e.g. of less than or equal to about 2(corresponding to a Vickers Hardness of less than or equal to about 36),e.g. of less than or equal to about 1.5, e.g. of less than or equal toabout 1 (corresponding to a Vickers Hardness of less than or equal toabout 2.4).

According to various embodiments, a mechanical hardness of a materialmay refer to a standardized mechanical hardness of a body made from thematerial, e.g. a block and/or a pore free body made from the material.The mechanical hardness of a material may be understood as beingindependently from the shape of the body.

According to various embodiments, the mechanical hardness may be aspatially averaged mechanical hardness, e.g. spatially averaged over atleast one of a region, a body and a material.

According to various embodiments, a mechanical hardness according to afirst measurement method may be converted into a respective mechanicalhardness according to a second measurement method (e.g. using a hardnessconversion table), illustratively, expressing the same physicalproperty. By way of example, a mechanical hardness value according tothe Brinell Hardness may substantially correspond to the value accordingto the Vickers Hardness (having a deviation less than 10% from eachother).

A relation (greater or smaller) described herein, may be maintainedduring the conversion from the first measurement method to secondmeasurement method. For example, a relation “a first mechanical hardnessgreater than a second mechanical hardness” may maintain independentlyweather expressed in accordance with the first measurement method or thesecond measurement method. A body or material having the firstmechanical hardness may at least one of scratch or deform a body ormaterial having the second mechanical hardness when applying a loadphysically contacting them (contact pressure).

A thickness of the at least one portion 102 p (extension parallel to therotation axis 101 a) may be more than about 10 micrometer (μm), e.g.more than about 100 μm, e.g. more than about 250 μm, e.g. more thanabout 500 μm, e.g. more than about 1 millimeter (mm), e.g. more thanabout 10 mm.

FIG. 5 illustrates a chuck 500 in a schematic cross sectional viewaccording to various embodiments (e.g. viewing along direction 105).

According to various embodiments, the support carrier 102 c may includeat least one vacuum line 402 (e.g. a plurality of vacuum lines 402) forconnecting to a vacuum creating system 404. The vacuum creating system404 may include or be formed from at least one pump, e.g. a vacuum pump.The vacuum creating system 404 may be connected to the at least onevacuum line 402 of the support carrier 102 c, e.g. by a vacuum tube. Thevacuum creating system 404 may be configured to create a vacuum in theat least one vacuum line 402 of the support carrier 102 c via theconnection. The vacuum line(s) 402 may also be referred to as vacuumchannel(s) or vacuum pipe(s).

According to various embodiments, the workpiece-support 102 s mayinclude at least one through hole 414 (e.g. a plurality of through holes414) connected to the at least one vacuum line 402 of the supportcarrier 102 c (illustratively, such that one or more workpieces on theworkpiece-support 102 s may be adhered by suction when a vacuum iscreated via the at least one vacuum line 402 of the support carrier 102c). In other words, the at least one through hole 414 may be disposedsuch that it couples the at least one vacuum line 402 when theworkpiece-support 102 s is disposed at least one of in and on supportcarrier 102 c.

According to various embodiments, the workpiece-support 102 s mayinclude a recess 414 r connected to the at least one through hole 414.The recess 414 r may define an adhesion region of the workpiece-support102 s over which one or more workpieces 106 may be adhered by suctionwhen a vacuum is created via the at least one vacuum line 402 of thesupport carrier 102 c. For example, a vacuum may be created in therecess 414 r via the at least one through hole 414 during planarizingone or more workpieces 106.

A depth of recess 414 r (extension parallel to the rotation axis 101 a)may be less than a thickness of at least one of the workpiece-support102 s and the sacrificial support region 102 p, e.g. in the range fromabout 50% to about 95% of the thickness of at least one of theworkpiece-support 102 s and the sacrificial support region 102 p, e.g.more than about 100 μm, e.g. more than about 250 μm, e.g. more thanabout 500 μm, e.g. more than about 1 millimeter (mm), e.g. more thanabout 10 mm.

The chuck 500 (e.g., its support carrier 102 c) may include a supplyterminal 502 for workpiece adhesion supply. The supply terminal 502 mayinclude or be formed from one or more supply connections. The one ormore supply connections may be configured for being connected to asupply device (e.g., a vacuum creating system 404 or a voltage source404), e.g., via a supply connection.

For example, if the chuck 500 is configured for adhering the workpiece106 by suction (also referred to as pneumatic adhesion), the supplyterminal 502 may include or be formed from one or more vacuumconnectors. The supply terminal 502 may be configured to be coupled ormay be coupled to the vacuum creating system 404. The supply terminal502 may couple all vacuum lines 402 to each other. The pneumaticadhesion may be provided by at least one of forming and maintaining avacuum at least one of in and via the vacuum lines 402.

For example, if the chuck 500 is configured for adhering the workpiece106 by electrostatic force (also referred to as electrostatic adhesion),the supply terminal 502 may include or be formed from one or moreelectrical connectors. The supply terminal 502 may be configured to becoupled or may be coupled to a corresponding electrical voltage source404 (e.g., a power supply). The electrostatic adhesion may be achievedby providing an electrostatic potential (also referred to as electricalvoltage) to the chuck 500 (e.g., its workpiece-support 102 s).

Optionally, the supply terminal 502 may be configured for adhesion ofthe workpiece-support 102 c, if necessary, e.g., by at least one ofelectrostatic adhesion and a pneumatic adhesion.

In a related embodiment, the support carrier 102 c may include aplurality of vacuum lines 402. The workpiece-support 102 s may include aplurality of through holes 414. Each through hole of the plurality ofthrough holes 414 may be connected to at least one vacuum line of theplurality of vacuum lines 402.

According to various embodiments, the support carrier 102 c may includea recess 416 r for receiving the workpiece-support 102 s. The recess 416r of the support carrier 102 c may be configured such that theworkpiece-support 102 s protrudes from the support carrier 102 c whenreceived in the recess 416 r of the support carrier 102 c. The recess416 r may facilitate to position the workpiece-support 102 s relative tothe support carrier 102 c for connecting each through hole to at leastone vacuum line.

The workpiece-support 102 s may protrude from the support carrier 102 cwith more than about 10 micrometer (μm), e.g. more than about 100 μm,e.g. more than about 250 μm, e.g. more than about 500 μm, e.g. more thanabout 1 millimeter (mm), e.g. more than about 10 mm.

FIG. 6A illustrates a sacrificial support region 600 (e.g. of a chuck102 or of its workpiece-support 102 s) according to various embodimentsin a schematic cross sectional view or top view (e.g. viewing alongdirection 101) and FIG. 6B illustrates the sacrificial support region600 in a schematic cross sectional view 651 (e.g. viewing alongdirection 105). The sacrificial support region 600 may be planarized orto be planarized. The sacrificial support region 600 may be understoodas being used for processing a plurality of workpieces 106 (e.g., beforebeing replaced). In one or more embodiments, the sacrificial supportregion 600 may be consumed during planarizing the chuck 102. After thesacrificial support region 600 is consumed, it may be replaced (e.g., byreplacing the complete chuck 102 or at least the workpiece-support 102s). In other words, the sacrificial support region 600 may be a wearingsupport region 600.

According to various embodiments, the sacrificial support region 600 mayinclude two or more than two (a plurality of) adhesion regions 602 a,602 b separated from each other, e.g. gas separated from each other. Byway of example, the adhesion regions 602 a, 602 b may be separated fromeach other by one or more protruding separation walls 604.

Each adhesion region of the plurality of adhesion regions 602 a, 602 bmay include at least one through hole of the plurality of through holes414. For example, a first adhesion region 602 a may include one or morethrough holes 414 and a second adhesion region 602 b may include one ormore through holes 414. The one or more through holes of the firstadhesion region 602 a may be distant from the one or more through holessecond adhesion region 602 b, e.g. separated by the separation wall 604.

By way of example, the first adhesion region 602 a may at leastpartially surround the second adhesion region 602 b. Optionally, the oneor more further adhesion regions may at least partially surround thefirst adhesion region 602 a and the second adhesion region 602 b.

According to various embodiments, at least one adhesion region of theplurality of adhesion regions 602 a, 602 b may include a recess 414 rconnected to the at least one through hole 414 of the adhesion region ofthe plurality of adhesion regions 602 a, 602 b. By way of example, thefirst adhesion region 602 a may include a recess 414 r connected to theat least one through hole 414 of the first adhesion region 602 a.Alternatively or additionally, the second adhesion region 602 b mayinclude a recess 414 r connected to the at least one through hole 414 ofthe second adhesion region 602 b.

According to various embodiments, the separation wall 604 of eachadhesion region of the plurality of adhesion regions 602 a, 602 b may bepart of the sacrificial support region 102 p, e.g. monolithically. Theseparation wall 604 of each adhesion region of the plurality of adhesionregions 602 a, 602 b may be sidewalls of the recess 414 r of therespective adhesion region. The recesses 414 r of the plurality ofadhesion regions 602 a, 602 b may be formed in the sacrificial supportregion 600.

By way of example, the separation walls 604 of each adhesion region ofthe plurality of adhesion regions 602 a, 602 b may be monolithicallyconnected each other, e.g. as monolithically part of the sacrificialsupport region 600.

FIG. 7A illustrates a sacrificial support region 700 (e.g. of a chuck102 or of its workpiece-support 102 s) according to various embodimentsin a schematic cross sectional view or top view (e.g. viewing alongdirection 101) and FIG. 7B illustrates the sacrificial support region700 in a schematic cross sectional view 751 (e.g. viewing alongdirection 105). The sacrificial support region 700 may be planarized orto be planarized.

According to various embodiments, at least one adhesion region of theplurality of adhesion regions 602 a, 602 b may include one or moresupport protrusions 704 disposed in the recess 414 r of the adhesionregion of the plurality of adhesion regions 602 a, 602 b. By way ofexample, the first adhesion region 602 a may include one or more supportprotrusions 704 disposed in the recess 414 r of the first adhesionregion 602 a. Alternatively or additionally, the second adhesion region602 b may include one or more support protrusions 704 disposed in therecess 414 r of the second adhesion region 602 b.

According to various embodiments, the support protrusions 704 may bepart of the at least one portion of the workpiece-support 700.Alternatively or additionally, the support protrusions 704 may bemonolithically connected to at least one of: each other and theseparation wall 604, e.g. as monolithically part of the sacrificialsupport region 700.

FIG. 8A illustrates a workpiece-support 800 of a chuck according tovarious embodiments in a schematic cross sectional view or top view(e.g. viewing along direction 101).

According to various embodiments, the workpiece-support 800 may includeat least one further portion 802 (e.g. proximate to at least one of thesupport carrier 102 c and a first side 800 a). Illustratively, the atleast one further portion 802 of the workpiece-support 800 may provide astabilization of the sacrificial support region 102 p. The at least onefurther portion 802 may be also referred to as support stabilizationregion 802.

According to various embodiments, the workpiece-support 800 and thesupport carrier 102 c may be configured relative to each other such thatthe at least one portion 102 p of the workpiece-support 800 protrudesfrom the support carrier 102 c.

The sacrificial support region 102 p may include at least one of asurface to be planarized and the planarized surface 102 p (also referredto as support surface) which provides physical contact to one or moreworkpieces 106 on the workpiece-support 800.

The sacrificial support region 102 p may be disposed on a second side800 b of the workpiece-support 800 (also referred to as support side).The support stabilization region 802 may be disposed on a first side 800a of the workpiece-support 800 (also referred to as mounting side). Thefirst side 800 a may be opposite the second side 800 b. Optionally, oneor more additional portions of the workpiece-support 800 may be disposedbetween the sacrificial support region 102 p and the supportstabilization region 802.

When the workpiece-support 800 is disposed in the support carrier 102 c,the support stabilization region 802 may be disposed between the supportcarrier 102 c and the sacrificial support region 102 p.

According to various embodiments, the workpiece-support 800 may beformed plate-like. For example, the workpiece-support 800 may include orbe formed from a plate (e.g. a disc).

FIG. 8B illustrates a chuck 850 according to various embodiments in aschematic cross sectional view or top view (e.g. viewing along direction101) having a non-replaceable workpiece-support 102 s. Illustratively,the chuck 850 may not necessarily include the replaceableworkpiece-support 102 s. The workpiece-support 102 s may be attached tothe support carrier 102 c of the chuck 850.

According to various embodiments, the chuck 850 may include thesacrificial support region 102 p and the support carrier 102 c(illustratively, analog to the support stabilization region 102 c).

The sacrificial support region 102 p may include at least one of asurface to be planarized and the planarized surface 122 p (also referredto as support surface) which provides physical contact to one or moreworkpieces 106 on the chuck 850.

The sacrificial support region 102 p may be disposed on a second side800 b of the chuck 850 (also referred to as support side). The supportcarrier 102 c may be disposed on a first side 800 a of the chuck 850(also referred to as mounting side). The first side 800 a may beopposite the second side 800 b. Optionally, one or more additionalportions of the chuck 850 may be disposed between the sacrificialsupport region 102 p and the support carrier 102 c.

According to various embodiments, the chuck 850 may be formedplate-like. For example, the chuck 850 may include or be formed from aplate (e.g. a disc).

The sacrificial support region 102 p of the chuck 850 may be configuredsimilar as the sacrificial support region 102 p of the replaceableworkpiece-support 800. For the sacrificial support region 102 p being apart of the chuck 850 or the replaceable workpiece-support 850 (see FIG.8A and FIG. 8B), a mechanical hardness of the sacrificial support region102 p may be less than (e.g. about 75%, about 50%, about 25%, about 10%,about 5% or about 2% of) the mechanical hardness of at least one of: thesupport stabilization region 802 and the support carrier 102 c.Alternatively or additionally, the mechanical hardness of thesacrificial support region 102 p may be less than (e.g. about 75%, about50%, about 25%, about 10%, about 5% or about 2% of) a mechanicalhardness of at least one of a nickel-based alloy (e.g. fabricated byelectroless nickel plating), e.g. a nickel-phosphorus alloy, and aniron-based alloy, e.g. steel.

Optionally, the mechanical hardness of the support stabilization region802 may be less than (e.g. about 75%, about 50%, about 25%, about 10%,about 5% or about 2% of) the mechanical hardness of at least one of: thesupport carrier 102 c and the machining bit 104 b.

According to various embodiments, the sacrificial support region 102 pmay include or be formed from a coating. The coating may include or beformed from one or more foils, e.g. one or more polymer foils, or one ormore layers (e.g. forming a coating), e.g. one or more polymer layers,and optionally an adhesion layer for adhering the sacrificial supportregion 102 p to the support stabilization region 802. For example, thesacrificial support region 102 p (e.g. the one or more foils) may beadhered to the support stabilization region 802, e.g. by the adhesionlayer. Additionally or alternatively, the sacrificial support region 102p (e.g. the one or more layers) may be disposed, e.g. sprayed or powderdeposited, on the support stabilization region 802. The disposing mayinclude exposing to an aerosol (also referred as to aerosol-depositing,e.g. aerosol-coating), wherein the aerosol includes particles (e.g.solid and/or viscous, e.g. liquid, particles). Additionally oralternatively, the sacrificial support region 102 p (e.g. the one ormore layers) may be laminated, pressed and/or molded.

For example, one or more foils may be laminated on the supportstabilization region 802 to form the one or more layers. Additionally oralternatively, a material may be pressed on the support stabilizationregion 802 to form the one or more layers. Pressing may includedeforming the material using pressure. Laminating may, for example,include pressing the foil on the support stabilization region 802 whileheating the foil.

For example, a material (also referred as to sacrificial material)disposed on the support stabilization region 802 may be molded and/orsintered to form the one or more layers. For example, the moldablematerial may include or be formed from particles (e.g. from the aerosol)and/or may include or be formed from a paste (e.g. including a viscousmaterial and/or particles). For example, the viscous material may besolidified (e.g. dried) by heat and/or form a matrix (e.g. a polymermatrix) in which the particles (e.g. metallic particles) are embedded.The matrix and the particles may differ by its material, e.g. bychemical composition. Additionally or alternatively, a hardness of theparticles may be greater than a hardness of the matrix.

According to various embodiments, the sacrificial support region 102 p(e.g. the particles, the sacrificial material and/or the foil) mayinclude or be formed from a polymer (e.g., organic or inorganic), e.g.at least one of synthetic rubber, phenol formaldehyde resin (orBakelite), neoprene, nylon, polyvinyl chloride (PVC or vinyl),polystyrene, polyethylene (e.g. polyethylene terephthalate, alsoreferred to as PET), polypropylene, polyacrylonitrile, PVB, silicone, orthe like. Alternatively or additionally, the sacrificial support region102 p (e.g. the particles, the sacrificial material and/or the foil) mayinclude or be formed from a metallic material, e.g. having a MohsHardness of less than about 4, e.g. of less than about 3, e.g. of lessthan about 2.5, e.g. of less than about 2, e.g. of less than about 1.5,e.g. of less than about 1. For example, the metallic material of thesacrificial support region 102 p may include at least one of thefollowing metals: lead, indium, silver, aluminum, copper and gold.

For example, the particles and/or the at least one layer may include orbe formed from the sacrificial material, e.g. the polymer and/or themetal.

The laminating, molding and/or pressing may be suitable for asacrificial support region 102 p (e.g. its one or more layers) includingor formed from the polymer (e.g. polymer particles and/or polymer foil).The sintering, pressing and/or molding may be suitable for a sacrificialsupport region 102 p (e.g. its one or more layers) including or formedfrom the metal (e.g. metal particles).

Optionally the molding, the sintering, the aerosol-depositing and/or thepowder depositing may result in a sacrificial support region 102 p (e.g.its one or more layers) including a plurality of pores (e.g. betweenadjacent particles) and/or including a plurality of particles (e.g.being in contact with each other, e.g. like grains and/or deformed). Forexample, the particles, which have been melted or sintered (during thematerial is densified) may still be visible as their residuals (e.g.deformed and/or interconnected particles). This (e.g. deformed and/orinterconnected particles) particles may also referred as to particleresiduals.

A porosity (also referred to as void fraction or pore fraction), e.g. ofthe sacrificial support region 102 p (e.g. of its at least onesacrificial layer), may refer to void space in a region, and may beunderstood as a fraction of the volume of voids (also referred as topores, e.g. inclusions of gas) over the total volume or total area ofthe region (e.g. a layer or material). A porous layer (e.g. the at leastone sacrificial layer), region (e.g. the sacrificial support region 102p) or material (in other words including pores) may, for example, have aporosity in the range from about 0.01 to about 0.9 (e.g. about 0.1 toabout 0.9), or in other words, as a percentage in the range from about1% to about 90% (e.g. about 10% to about 90%) or less than about 1%(e.g. more than about 0.01%, e.g. more than about 0.1%), e.g. in therange from about 0.01% to about 1%. The porosity may refer to aspatially averaged value, e.g. averaged over a region. According tovarious embodiments, the pore-density and the spatial pore-size maydefine the porosity. Alternatively or additionally, the pore-density andthe porosity may define the spatial pore-size. Alternatively oradditionally, the porosity and the spatial pore-size may define thepore-density. The more pores are present (e.g. included in a region,e.g. a layer), the higher the pore-density and/or the porosity may be.

For example, the density of the porous layer, region or material may beless than the respective bulk density (due to the voids).

According to various embodiments, the support stabilization region 802may include or be formed from a metallic material, e.g. different fromthe support carrier 102 c.

The sacrificial support region 102 p being a part of the chuck 850 orthe workpiece-support 850 may be configured as described before (see forexample, FIG. 6A and FIG. 6A or FIG. 7A and FIG. 7B).

A thickness of the sacrificial support region 102 p (extension parallelto the rotation axis 101 a) may be more than about 10 micrometer (μm),e.g. more than about 100 μm, e.g. more than about 250 μm, e.g. more thanabout 500 μm, e.g. more than about 1 millimeter (mm), e.g. more thanabout 10 mm, e.g. more than about 20 mm.

FIG. 9 illustrates a chuck 900 according to various embodiments in aschematic cross sectional view or top view (e.g. viewing along direction101).

According to various embodiments, the chuck 900 may include a supportcarrier 102 c a workpiece-support 102 s replaceably mounted on thesupport carrier 102 c. The mechanical hardness of the sacrificialsupport region 102 p may be less than the mechanical hardness of thesupport carrier 102 c, e.g. as described before. Optionally, theworkpiece-support 102 s may extend at least one partially into thesupport carrier 102 c, as illustrated in FIG. 9. Alternatively, theworkpiece-support 102 s may be disposed over the support carrier 102 c(see for example, FIG. 4). In both cases, at least the sacrificialsupport region 102 p may protrude from the support carrier 102 c. Thismay facilitate adjusting the workpiece-support 102 s by a planarizationof the planarization tool 104.

FIG. 10A illustrates a replaceable workpiece-support 1000 (e.g. for achuck) according to various embodiments in a schematic cross sectionalview (e.g. viewing along direction 101, e.g., along a cross section1051), and FIG. 10B shows the replaceable workpiece-support 1000 in aschematic top view.

The replaceable workpiece-support 1000 may include a first side 800 aconfigured to be replaceably mounted to a support carrier 102 c of thechuck 102, e.g. configured similar to a support carrier 102 c describedbefore. The replaceable workpiece-support 1000 may further include asecond side 800 b opposite the first side 800 a. The second side 800 bmay be configured to support one or more workpieces 106 and/or includeone or more protrusions.

The replaceable workpiece-support 1000 may further include at least onethrough hole 414 (e.g. a plurality of through holes 414) extending fromthe first side 800 a to the second side 800 b. This may enable that oneor more workpieces 106 received over the second side 800 b may beadhered by suction when a vacuum is created in the at least one throughhole 414.

A mechanical hardness of at least one portion 102 p (sacrificial supportregion 102 p) of the workpiece-support 1000 proximate (e.g. at leastpartially covering) to the second side 800 b may be less than (e.g.about 75%, about 50%, about 25%, about 10%, about 5% or about 2% of) amechanical hardness of at least one of a nickel-based alloy, e.g. anickel-phosphorus alloy, and an iron-based alloy, e.g. steel.Alternatively or additionally, the sacrificial support region 102 p mayinclude or be formed from a polymer. This may enable to adjust theworkpiece-support 1000 by planarizing via a planarizing tool 106.

FIG. 11 illustrates a method 1100 for planarizing one or more workpiecesaccording to various embodiments in a schematic flow diagram.

According to various embodiments, the method may include in 1102:replacing (e.g. at least one of mounting and demounting) aworkpiece-support of a chuck (e.g. from the support carrier).

The method may further include in 1104: planarizing theworkpiece-support using a planarization tool. For example, the methodmay include in 1104: planarizing at least one portion of theworkpiece-support using a planarization tool.

The method may further include in 1106: disposing one or more workpiecesover the workpiece-support after the planarizing the at least oneportion of the workpiece-support.

The method may further include in 1108: planarizing one or moreworkpieces using the planarization tool. For example, the method mayinclude in 1108: planarizing at least one portion of the workpiece oreach workpiece using the planarization tool.

The workpiece-support may be configured as described herein. Themechanical hardness of the at least one portion of the workpiece-supportmay be less than a support carrier of the chuck receiving theworkpiece-support.

According to various embodiments, the mechanical hardness of the atleast one portion of the workpiece-support may be within a range ofabout 20% to about 500% of the mechanical hardness of at least oneportion of the workpiece or each workpiece (e.g. a sacrificial workpieceregion), e.g. within a range of about 50% to about 200% of themechanical hardness of the at least one portion of the workpiece or eachworkpiece. Alternatively or additionally, the mechanical hardness of theat least one portion of the workpiece-support may be less than (e.g.about 75%, about 50%, about 25%, about 10%, about 5% or about 2% of) amechanical hardness of at least one of a nickel-based alloy (e.g.fabricated by electroless nickel plating), e.g. a nickel-phosphorusalloy, and an iron-based alloy, e.g. steel.

The at least one portion of the workpiece or each workpiece may beplanarized using the planarization tool.

Optionally, the method may include planarizing the at least one portionof the workpiece-support using the planarization tool.

By way of example, the at least one portion (of at least one of: theworkpiece or each workpiece and the workpiece-support) may include or beformed from a polymer.

According to various embodiments, the more than one workpiece 106 mayinclude a plurality of workpieces 106, e.g., more than about 10workpieces, e.g., more than about 100 workpieces, e.g., more than about1000 workpieces. According to various embodiments, the plurality ofworkpieces 106 may be planarized sequentially (in other words, one afterthe other) using the workpiece planarization arrangement. According tovarious embodiments, planarization of the workpiece or workpieces 106may be carried out between a first planarization of theworkpiece-support and a second planarization of the workpiece-support.According to various embodiments, planarization of the workpiece-supportmay be carried out between planarization of a first workpiece (or firstplurality of workpieces) 106 and planarization of a second workpiece (orsecond plurality of workpieces) 106.

FIG. 12 illustrates a method 1200 for adjusting a workpieceplanarization arrangement according to various embodiments in aschematic flow diagram. The workpiece planarization arrangement mayinclude a chuck and a planarization tool, e.g. configured as describedherein.

The chuck may include or be formed from a support carrier and aworkpiece-support being replaceably mounted to the support carrier. Themechanical hardness of the workpiece-support may be less than (e.g.about 75%, about 50%, about 25%, about 10%, about 5% or about 2% of) themechanical hardness of the support carrier.

According to various embodiments, the method may include in 1202:replacing (e.g. at least one of mounting and demounting) theworkpiece-support of the chuck (e.g. on or respectively from the supportcarrier).

The method may further include in 1202: planarizing theworkpiece-support by the planarization tool. For example, the method mayinclude planarizing at least one portion of the workpiece-support usingthe planarization tool.

The method may optionally include: disposing one or more workpieces overthe workpiece-support after the planarizing the workpiece-support.

The method may optionally include: planarizing one or more workpiecesusing the planarization tool. For example, the method may includeplanarizing at least one portion of the workpiece or each workpieceusing the planarization tool, e.g., each of the more than oneworkpieces.

According to various embodiments, the mechanical hardness of the atleast one portion of the workpiece-support may be within a range ofabout 20% to about 500% of the mechanical hardness of at least oneportion of the workpiece or each workpiece (e.g. a sacrificial layer ofthe workpiece or each workpiece), e.g. within a range of about 50% toabout 200% of the mechanical hardness of the at least one portion of theworkpiece or each workpiece. Alternatively or additionally, themechanical hardness of the at least one portion of the workpiece-supportmay be less than (e.g. about 75%, about 50%, about 25%, about 10%, about5% or about 2% of) a mechanical hardness of at least one of anickel-based alloy (e.g. fabricated by electroless nickel plating), e.g.a nickel-phosphorus alloy, and an iron-based alloy, e.g. steel.

The (e.g. at least one portion of) the one or more workpieces (e.g., theworkpiece or each workpiece) may be planarized using the planarizationtool.

Optionally, the method may include planarizing the (e.g. at least oneportion of) the workpiece-support using the planarization tool.

By way of example, the at least one portion (of at least one of theworkpiece or each workpiece and the workpiece-support) may include or beformed from a polymer.

FIG. 13A illustrates a workpiece planarization arrangement 1300according to various embodiments in a schematic cross sectional view ortop view (e.g. viewing along direction 101) with one or more workpieces106 and FIG. 13B the workpiece planarization arrangement 1300 withoutworkpiece 106 in the same view.

According to various embodiments, the workpiece planarizationarrangement 1300 may include a chuck 102 and a planarization tool 104.The planarization tool 104 may be configured to planarize the chuck 102(without the one or more workpieces 106) and to planarize one or moreworkpieces 106 on the chuck 102. Illustratively planarizing the chuck102 (also referred to as self-planarization) may adjust the chuck 102for planarizing the one or more workpieces 106.

According to various embodiments a hardness of a portion 102 p of thechuck 102 (planarized or to be planarized) may be configured such thatthe planarizing the portion 102 p of the chuck 102 (planarized or to beplanarized) and the planarizing a portion 106 f to be planarized of theone or more workpieces 106 (in other words, the workpiece or eachworkpiece 106) use the planarization tool 104 in at least one of thesame physical configuration and the same machining bit configuration (inother words in a first machining bit configuration for planarizing theone or more workpieces and a second machining bit configurationplanarizing the at least one portion of the chuck, wherein the firstmachining bit configuration and the second machining bit configurationare the same).

In the same physical configuration may be understood as that thephysical configuration of the planarization tool 104 may not benecessarily changed between planarizing the one or more workpieces 106and planarizing the chuck 102. For example, the planarization tool 104may be mounted in at least one of the same position and the sameorientation relative to the chuck 102.

In the same machining bit configuration may be understood as using thesame machining bit 104 b, for example, in the same physicalconfiguration. For example, the (e.g., one and the same) machining bit104 b may be mounted in at least one of the same position and the sameorientation relative to the chuck 102. Alternatively or additionally,the machining bit 104 b may be mounted in at least one of the sameposition and the same orientation in the bit socket 104 h.

For example, planarizing the chuck 102 (e.g. its workpiece-support 102s) may use the same (e.g. at least one of mechanical and thermal)conditions, as planarizing the one or more workpieces 106 (in otherwords, the workpiece or each workpiece 106). For example, planarizingthe chuck 102 (e.g. its workpiece-support 102 s) and planarizing the oneor more workpieces 106 may use the same of at least one of the followingparameters: speed of rotation 101 r of the planarization tool 104 (e.g.its machining bit 104 b), speed of second displacement 103 d, speed ofrevolving the machining bit 104 b and contact pressure between chuck 102and planarization tool 104 (e.g. its machining bit 104 b).Alternatively, at least one of the above mentioned parameters may bedifferent between planarizing the one or more workpieces 106 and thechuck 102. For example, planarizing the chuck 102 (e.g. itsworkpiece-support 102 s) and planarizing the one or more workpieces 106may differ in at least one of the following parameters (e.g., by lessthan about 90%, e.g., by less than about 75%, e.g., by less than about50%, e.g., by less than about 25%): speed of rotation 101 r of theplanarization tool 104 (e.g. its machining bit 104 b), speed of seconddisplacement 103 d (also referred to as displacement speed), speed ofrevolving the machining bit 104 b and contact pressure between chuck 102and planarization tool 104 (e.g. its machining bit 104 b).

According to various embodiments, the speed of second displacement 103 dfor planarizing the chuck 102 (e.g. its workpiece-support 102 s) andplanarizing the one or more workpieces 106 may be more than about 0.1mm/s, e.g., more than about 0.2 mm/s, e.g., more than about 0.3 mm/s,e.g., more than about 0.4 mm/s, e.g., more than about 0.5 mm/s, e.g.,more than about 0.75 mm/s, e.g., more than or equal to about 1 mm/s(e.g., in the range from about 1 mm/s to about 2 mm/s), e.g., more thanor equal to about 2 mm/s, e.g., more than or equal to about 5 mm/s.

According to various embodiments, the speed at least one of the rotation101 r of the planarization tool 104 and revolving the machining bit 104b for planarizing the chuck 102 (e.g. its workpiece-support 102 s) andplanarizing the one or more workpieces 106 may be more than about 500rounds per minute (also referred to as revolutions per minute orrotations per minute), e.g. more than about 1000 rounds per minute, e.g.more than about or equal to 1500 rounds per minute, e.g. more than about2000 rounds per minute, e.g. more than about or equal to 2200 rounds perminute.

According to various embodiments, the mechanical hardness of the portion102 p of the chuck 102 (planarized or to be planarized) may be less than(e.g. about 75%, about 50%, about 25%, about 10%, about 5% or about 2%of) at least one of: five times (500% of) the mechanical hardness of theportion 106 f (planarized or to be planarized) of the one or moreworkpieces 106 (e.g. the sacrificial layer 106 f) and a mechanicalhardness of at least one of a nickel-based alloy, e.g. anickel-phosphorus alloy, and an iron-based alloy, e.g. steel.

By way of example, the chuck 102 may include or be formed from apolymer.

According to various embodiments, the workpiece planarizationarrangement 1300 may include a sensor configured for sensing a totalthickness variation of the planarized workpiece 106. Aself-planarization may be started if the total thickness variationfulfills a predetermined criterion (e.g. exceeds a predetermined value),e.g. automatically. Therefore, the workpiece planarization arrangement1300 may include a controller configured for comparing the totalthickness variation with the predetermined criterion and configured tostart the self-planarization if the total thickness variation fulfillsthe predetermined criterion. Alternatively or additionally, theworkpiece planarization arrangement 1300 may include a switch configuredto start the self-planarization if the switch is pressed.

During the self-planarization, the workpiece planarization arrangement1300 may be in a workpiece planarization configuration in which theplanarization tool 104 is configured to planarize one or more workpieces106 on the chuck 102. In other words, the at least one portion 102 p ofthe chuck 102 may be planarized by the planarization tool in theworkpiece planarization configuration.

In an alternative embodiment, alternatively or additionally to therotatable machining bit 104 b, the chuck 102 may be rotatable around arotation axis.

In one or more embodiment, the chuck 102 may be made from a polymer.

FIG. 14 illustrates a method 1400 for planarizing one or more workpiecesaccording to various embodiments in a schematic flow diagram. Theworkpiece planarization arrangement may include a chuck and aplanarization tool, e.g. configured as described herein.

According to various embodiments, the method may include in 1402:planarizing (at least one portion of) a workpiece-support using aplanarization tool.

The method may further include in 1404: disposing one or more workpiecesover the workpiece-support after the planarizing the workpiece-support.

The method may further include in 1406: planarizing (e.g. at least oneportion of) the one or more workpieces using the planarization tool.

According to various embodiments, a hardness of the workpiece-support(e.g. the at least one portion thereof, e.g. planarized or to beplanarized) may be configured such that the planarizing theworkpiece-support (the at least one portion thereof) and the planarizingone or more workpieces (e.g. the at least one portion thereof, e.g.planarized or to be planarized) use the planarization tool in at leastone of the same physical configuration (e.g. without modification orreconfiguration) and the same machining bit (e.g. in the sameconfiguration, in other words, without modification or reconfiguration).This may enable to adjust the both planarization to each other.

Alternatively or additionally, a hardness of the workpiece-support (e.g.the at least one portion thereof, e.g. planarized or to be planarized)may be configured such that the planarizing the workpiece-support (e.g.the at least one portion thereof, e.g. planarized or to be planarized)and the planarizing the one or more workpieces (e.g. the at least oneportion thereof) use at least one of the same physical configurationbetween workpiece-support and planarization tool (e.g. for adjusting theplanarized support surface and the planarized workpiece surface to eachother) and the same machining bit.

FIG. 15 illustrates a method 1500 for planarizing one or more workpiecesaccording to various embodiments in a schematic flow diagram. Theworkpiece planarization arrangement may include a chuck and aplanarization tool, e.g. configured as described herein.

The method may include in 1502: planarizing a workpiece-support using aplanarization tool.

The method may further include in 1504: disposing one or more workpiecesover the workpiece-support after the planarizing the workpiece-support.

The method may further include in 1506: planarizing one or moreworkpieces using the planarization tool for forming a planarizedworkpiece surface of the one or more workpieces.

According to various embodiments, a hardness of the workpiece-support(e.g. the at least one portion thereof, e.g. planarized or to beplanarized) may be configured such that the planarizing theworkpiece-support (e.g. the at least one portion thereof) and theplanarizing the one or more workpieces (e.g. the at least one portionthereof, e.g. planarized or to be planarized) use the same physicalconfiguration of at least one of the planarization tool and themachining bit (e.g., the same machining bit).

Alternatively or additionally, a hardness of the workpiece-support (e.g.the at least one portion thereof, e.g. planarized or to be planarized)may be configured such that the planarizing the workpiece-support (e.g.the at least one portion thereof) and the planarizing the one or moreworkpieces (e.g. the at least one portion thereof, e.g. planarized or tobe planarized) use the same physical configuration at least one ofbetween workpiece-support and planarization tool and the machining bit(e.g., for adjusting planarized support surface and the planarizedworkpiece surface to each other).

FIG. 16 illustrates a method 1600 for adjusting a workpieceplanarization arrangement according to various embodiments in aschematic flow diagram. The workpiece planarization arrangement mayinclude a chuck and a planarization tool, e.g. configured as describedherein.

The chuck may include or be formed from a support carrier and aworkpiece-support being replaceably mounted to the support carrier. Amechanical hardness of the workpiece-support (e.g. the at least oneportion thereof, e.g. planarized or to be planarized) is less than (e.g.about 75%, about 50%, about 25%, about 10%, about 5% or about 2% of) amechanical hardness of the support carrier.

The method may include in 1602: providing a workpiece planarizationconfiguration of the planarization tool (e.g., its machining bit) inwhich the planarization tool is configured to planarize one or moreworkpieces on the workpiece-support.

The method may further include in 1604: planarizing theworkpiece-support (e.g. the at least one portion thereof) by theplanarization tool in the workpiece planarization configuration.

FIG. 17A illustrates a replaceable workpiece-support 1700 (e.g. for achuck) or a non-replaceable workpiece-support 1700 of a chuck accordingto various embodiments in a perspective view and FIG. 17B theworkpiece-support 1700 in a detailed view.

The workpiece-support 1700 may include a plurality of supportprotrusions 704 disposed in the recess of each adhesion region of theplurality of adhesion regions 602 a, 602 b.

According to various embodiments, compared to a conventional chuck, apolymer workpiece-support 1700 may be provided. The workpiece-support1700 may be structured on the second side 800 b such that at least twoadhesion regions 602 a, 602 b (also referred to as vacuum zones) areprovided. By way of example, the smaller adhesion regions 602 b may havea diameter of about 8 inches and the larger adhesion regions 602 a mayhave a diameter of about 12 inches.

The replaceable workpiece-support 1700 and the non-replaceableworkpiece-support 1700 may enable to planarize the chuck withoutchanging the configuration of the planarization tool 104 (at least oneof thermal and mechanical). The replaceable workpiece-support 1700 maybe a wearing part, e.g. configured to be produced at low costs and beexchanged (e.g. if depleted or irreversible contaminated).

According to various embodiments, a total thickness variation may bemonitored (e.g. sensed by sensors). A self-planarization may be startedif the total thickness variation fulfills a predetermined criterion(e.g. exceeds a predetermined value).

FIG. 18 illustrates a chuck 1800 having a non-replaceableworkpiece-support 102 s according to various embodiments in aschematically cross sectional view or side view. The non-replaceableworkpiece-support 102 s may be configured similar to the replaceableworkpiece-support described herein.

According to various embodiments, the chuck 1800 (e.g. at least oneportion 102 p of the chuck 1800) may include or be formed from asacrificial material. The sacrificial material may be configured toprovide a mechanical hardness of the at least one portion 102 p of thechuck 1800 configured as the following.

The mechanical hardness of the at least one portion 102 p of the chuck1800 (planarized or to be planarized), e.g. the complete chuck 1800, maybe within a range of about 20% to about 500% of the mechanical hardnessof the at least one portion of the one or more workpieces (planarized orto be planarized), e.g. within a range of about 50% to about 200% of themechanical hardness of the at least one portion of the one or moreworkpieces.

Alternatively or additionally, the mechanical hardness of the at leastone portion 102 p of the chuck 1800 (planarized or to be planarized),e.g. the complete chuck 1800, may be less than (e.g. about 75%, about50%, about 25%, about 10%, about 5% or about 2% of) at least one of amechanical hardness of at least one of a nickel-based alloy, e.g. e.g. anickel-phosphorus alloy, and an iron-based alloy, e.g. steel (in otherwords, of the nickel-based alloy and/or the iron-based alloy).

FIG. 19 illustrates a method 1900 for thinning a wafer according tovarious embodiments in a schematic cross sectional view or side view.

According to various embodiments, the method may include in 1902:providing a wafer 106 w including a plurality of integrated circuits 106c. The wafer 106 w may include or be formed from a semiconductormaterial, e.g. including or formed from silicon. Each integrated circuitof the plurality of integrated circuits 106 c may be electricallycontacted be at least two (e.g. two or three) contact pads.

The method may further include in 1904: Coupling the wafer 106 w and astabilization layer 106 s, e.g. a glass carrier. Coupling the wafer 106w may include adhering the wafer 106 w to the stabilization layer 106 susing an adhesive layer 106 a.

The method may further include in 1906: Disposing a sacrificial layer106 f (e.g. a self-adhesive tape) over the stabilization layer 106 s.The sacrificial layer 106 f may include or be formed from a sacrificialmaterial (e.g. a polymer). The sacrificial material may be configuredsuch that the sacrificial layer 106 f has a first mechanical hardness.The first mechanical hardness may be less than (e.g. about 75%, about50%, about 25%, about 10%, about 5% or about 2% of) a mechanicalhardness of at least one of a nickel-based alloy (e.g. fabricated byelectroless nickel plating), e.g. a nickel-phosphorus alloy, and aniron-based alloy, e.g. steel.

The method may further include in 1908: Planarizing the sacrificiallayer 106 f, e.g. by subtractive manufacturing (e.g. including at leastone of cutting and machining). By planarizing the sacrificial layer 106f, a planarized surface 106 p may be formed. The planarized surface 106p may be plane-parallel to a rear-surface 106 b of the wafer oppositethe sacrificial layer 106 f.

According to various embodiments, planarization package 106 f, 106 s,106 a, 106 w (including at least one of the sacrificial layer 106 f, thestabilizing layer 106 s, the adhesion layer 106 a and the wafer 106 w)may be one or more workpieces 106.

The method may further include in 1910: Thinning the wafer 106 w.Thinning the wafer 106 w may include removing material of the wafer 106w (from the rear-surface 106 b), e.g. by subtractive manufacturing (e.g.including grinding). For example, thinning the wafer 106 w may includeor be formed from forming a recess into the wafer. Optionally, thethinning the wafer 106 w may include forming at least one of a recess116 r and a protruding rim 106 r (sometimes also referred to as taikoring).

After thinning the wafer 106 w, a thickness variation of the wafer 106 wbetween two integrated circuit of the plurality of integrated circuits106 c (e.g. disposed maximal distant from each other, e.g. diametric)may be less than about 1 μm, e.g. less than about 0.5 μm, less thanabout 0.2 μm.

In various embodiments, the thinning the wafer 106 w may includethinning at least one portion of the wafer 106 w (in other words,thinning the wafer 106 w partially or completely).

FIG. 20 illustrates a method 2000 for planarizing a chuck (e.g. itsworkpiece-support 102 s) according to various embodiments in a schematiccross sectional view or side view.

According to various embodiments, the method may include in 2002:provide at least one portion 102 p of a chuck 102 (e.g. of itsworkpiece-support 102 s) to be planarized. The at least one portion 102p to be planarized may deviate from a predefined plane 2001, e.g. by atleast about 0.1 μm, e.g. by at least about 0.2 μm, e.g. by at leastabout 0.5 μm, e.g. by at least about 1 μm, e.g. by at least about 2 μm,e.g. by at least about 3 μm, e.g. by at least about 4 μm, e.g. by atleast about 5 μm, e.g. by at least about 6 μm, e.g. by at least about 7μm, e.g. by at least about 8 μm, e.g. by at least about 9 μm, e.g. by atleast about 10 μm. For example, the at least one portion 102 p may becontaminated by a particle 2003. Alternatively or additionally, the atleast one portion 102 p may include or be formed from an uneven surface(e.g. provided by the support protrusions 704).

The plane 2001 may be predefined by the planarizing tool 104. In one ormore embodiments, the predefined plane 2001 may deviate from amathematical planar plane (e.g., due to physical tolerances). Thepredefined plane 2001 may be plane-parallel (or at least substantiallyplane-parallel) to or may be the planarizing plane defined by theplanarization tool 104. For example, the predefined plane 2001 may beperpendicular to the rotation axis 101 a (see FIG. 2). Alternatively oradditionally, the predefined plane 2001 may be parallel (or at leastsubstantially parallel) to at least one of the second displacement 103 d(see FIG. 2). In various embodiments, the predefined plane 2001 may beparallel (or at least substantially parallel) to direction 103 anddirection 105 (see FIG. 2).

The method may further include in 2004: Planarizing the at least oneportion 102 p, e.g. by a planarization tool 104. Planarizing the atleast one portion 102 p may include a subtractive manufacturing of theat least one portion 102 p, e.g. using a machining bit 104 b. Themachining bit 104 b may be move over the at least one portion 102 p,e.g. by a rotation 101 r of the bit carrier 104 c.

The method may further include in 2006: Forming at least one planarizedportion 102 p′ by the planarizing 2004 the at least one portion 102 p.The at least one planarized portion 102 p′ may be substantiallyplane-parallel to the predefined plane 2001, e.g., the at least oneplanarized portion 102 p′ may deviate from the predefined plane 2001 byless than the at least one portion 102 p (before the planarizing 2004),e.g. by less than or equal to about 2 μm. e.g. by less than about 1 μm,e.g. less than about 0.5 μm, less than about 0.2 μm. The deviation maybe understood as measured over a lateral extension of the predefinedplane 2001, e.g. over more or equal to about 100 mm, e.g. over more orequal to about 200 mm, e.g. over more or equal to about 300 mm.

By way of example, the deviation of the at least one planarized portion102 p′ from the predefined plane 2001 may be less than about 2 μm (e.g.over more or equal to about 300 mm).

After thinning the wafer 106 w, the sacrificial layer 106 f may beremoved and optional at least one of the stabilization layer 106 s andthe adhesive layer 106 a may be removed, if present. The integratedcircuits 106 c may be processed further (e.g. with the third layer 106 aon top), e.g. singulated.

FIG. 21A illustrates a workpiece-support 2100 according to variousembodiments in a perspective view and FIG. 21B the workpiece-support2100 in a detailed view.

The workpiece-support 2100 may include or be formed from a syntheticpolymer, e.g. at least one of a thermoplastic and an elastomer.

The workpiece-support 2100 may include or be formed from more than twoadhesion regions 602 a, 602 b, 602 c. Each adhesion region of the morethan two adhesion regions 602 a, 602 b, 602 c may include a circularrecess 414 r (e.g. in form of a groove).

FIG. 22A illustrates a planarization arrangement 2200 according tovarious embodiments in a top view (e.g., onto the second side 800 b) anda corresponding cross sectional view 2101 and side view 2203, whereinFIG. 22B illustrates chuck socket 2202 in the top view without chuck102.

The planarization arrangement 2200 may include a chuck socket 2202. Thechuck socket 2202 may include an opening 2202 o. The chuck 102 (e.g.,its support carrier 102 c) may include one or more vacuum ports 412(e.g., in a supply terminal). The one or more vacuum ports 412 may becoupled to the at least one vacuum line 402 of the chuck 102. The chuck102 (e.g., its support carrier 102 c) may include a first mountingstructure 102 f configured to mount the chuck 102 at the chuck socket2202, e.g., at a corresponding second mounting structure 2202 f of thechuck socket 2202. For example, the chuck 102 may be mounted at thechuck socket 2202 by screws.

The opening 2202 o of the chuck socket 2202 may expose at least oneportion of the first side 800 a of the chuck 102 (e.g., its supportcarrier 102 c), e.g., at least the supply terminal 502. For example, theopening 2202 o of the chuck socket 2202 may expose the one or morevacuum ports 412 of the chuck 102. The opening 2202 o of the chucksocket 2202 may extend through the chuck socket 2202, e.g., from a firstside 800 a of the chuck socket 2202 to a second side 800 b of the chucksocket 2202 opposite the first side 800 a.

FIG. 23A to FIG. 23C illustrate a workpiece-support 102 s in a methodfor planarizing the workpiece-support 102 s according to variousembodiments in a schematic cross sectional view or side view.

Method 2300 a to 2300 b may be applied to the workpiece-support 102 s(e.g. its support stabilization region 802) without the support carrier102 c (e.g. being absent), e.g. on the workpiece-support 102 s beingunmounted (e.g. detached) from the support carrier 102 c (e.g. if theworkpiece-support 102 s is configured for being replaceably mounted tothe support carrier 102 c). Alternatively, the method 2300 a to 2300 bmay be applied to the whole chuck 102 (e.g. if the workpiece-support 102s is not configured for being replaceably mounted to the support carrier102 c or if the workpiece-support 102 keeps mounted to the supportcarrier 102 c).

According to various embodiments, the method may include in 2300 b:providing at least one portion 102 p to be planarized of theworkpiece-support 102 s. For example, the workpiece-support 102 s may beprovided unmounted from the support carrier 102 c or mounted to thesupport carrier 102 c, e.g. as part of the chuck 102 to be planarized.The at least one portion 102 p to be planarized may, for example,deviate from a predefined plane 2001, e.g. by at least about 0.1 μm,e.g. by at least about 0.2 μm, e.g. by at least about 0.5 μm, e.g. by atleast about 1 μm, e.g. by at least about 2 μm, e.g. by at least about 3μm, e.g. by at least about 4 μm, e.g. by at least about 5 μm, e.g. by atleast about 6 μm, e.g. by at least about 7 μm, e.g. by at least about 8μm, e.g. by at least about 9 μm, e.g. by at least about 10 μm. Forexample, the at least one portion 102 p may be contaminated, e.g. by aparticle 2003. Alternatively or additionally, the at least one portion102 p may include or be formed from an uneven surface (e.g. provided bythe support protrusions 704).

The plane 2001 may be predefined by the planarizing tool 104, asdescribed before. In one or more embodiments, the predefined plane 2001may deviate from a mathematical planar plane (e.g., due to physicaltolerances). The predefined plane 2001 may be plane-parallel (or atleast substantially plane-parallel) to or may be the planarizing planedefined by the planarization tool 104. For example, the predefined plane2001 may be perpendicular to the rotation axis 101 a (see FIG. 2).Alternatively or additionally, the predefined plane 2001 may be parallel(or at least substantially parallel) to at least one of the seconddisplacement 103 d (see FIG. 2). In various embodiments, the predefinedplane 2001 may be parallel (or at least substantially parallel) todirection 103 and direction 105 (see FIG. 2).

The method may further include in 2300 c: Planarizing the at least oneportion 102 p, e.g. by a planarization tool 104. Planarizing the atleast one portion 102 p may include a subtractive manufacturing of theat least one portion 102 p, e.g. using a machining bit 104 b. Themachining bit 104 b may be move over the at least one portion 102 p,e.g. by a rotation 101 r of the bit carrier 104 c.

The method may further include in 2300 c: Forming at least oneplanarized portion 102 p′ by the planarizing the at least one portion102 p. The at least one planarized portion 102 p′ may be substantiallyplane-parallel to the predefined plane 2001, e.g., the at least oneplanarized portion 102 p′ may deviate from the predefined plane 2001 byless than the at least one portion 102 p (before the planarizing 2004),e.g. by less than or equal to about 2 μm. e.g. by less than about 1 μm,e.g. less than about 0.5 μm, less than about 0.2 μm. The deviation maybe understood as measured over a lateral extension of the predefinedplane 2001, e.g. over more or equal to about 100 mm, e.g. over more orequal to about 200 mm, e.g. over more or equal to about 300 mm.

By way of example, the deviation of the at least one planarized portion102 p′ from the predefined plane 2001 may be less than about 2 μm (e.g.over more or equal to about 300 mm).

The method may optionally include in 2300 a, e.g. before 2300 b,providing a workpiece-support 102 s (e.g. its support stabilizationregion 802), e.g. as part of the chuck 102 or unmounted from the supportcarrier 102 c. The workpiece-support 102 s, e.g. its supportstabilization region 802, may optionally include one or more supportprotrusions 704 and/or one or more recesses 414 r.

According to various embodiments, planarizing the at least one portion102 p may not penetrate through the at least one portion 102 p, e.g. maynot expose the support stabilization region 802 and/or the one or moresupport protrusions 704.

The method may optionally include in 2300 b forming and/or reinforcingthe sacrificial support region 102 p, e.g. by adding material (alsoreferred as to sacrificial material) to the sacrificial support region102 p and/or to the workpiece-support 102 s, e.g. its supportstabilization region 802. For example, reinforcing the sacrificialsupport region 102 p may be applied after planarizing the at least oneportion 102 p at least one time or if a thickness of the sacrificialsupport region 102 p (extension parallel to the rotation axis 101 a, forexample, measured at the one or more support protrusions 704) may beless than about 100 μm, e.g. less than about 10 μm, e.g. less than about1 μm.

In general, the sacrificial material may be dry deposited (e.g. as solidsacrificial material without another viscous material) or wet deposited(e.g. as viscous sacrificial material or together with a viscous, e.g.liquid, material). Depositing the sacrificial material may, for example,include a physical (e.g. vapor, liquid or solid) deposition,dip-coating, sol-gel coating, spin coating, evaporation and/or is freeof plating. For example, the sacrificial material may be deposited (e.g.coated) in form of particles on the support stabilization region 802and/or to form the at least one sacrificial layer 102 l, e.g. one ormore sacrificial layers 102 l. Additionally or alternatively to theparticle deposition, the sacrificial material may be deposited in formof a viscous material which is solidified after deposition and/or may bedeposited in form of a solid foil.

For example, the sacrificial support region 102 p may be reinforced orformed by exposing the workpiece-support 102 s, e.g. its supportstabilization region 802, to an aerosol (also referred as toaerosol-depositing or aerosol-deposition). For example, the aerosol maybe emitted (e.g. sprayed, e.g. spray-coated) towards or on theworkpiece-support 102 s, e.g. its support stabilization region 802. Theaerosol may include or be formed from a colloid of (e.g. solid and/orviscous, e.g. liquid) particles (e.g. having a diameter less than onemicrometer) in air or another gas. For example, the particles include orbe formed from viscous (e.g. liquid) droplets or a solid powder. Forexample, exposing the workpiece-support 102 s, e.g. its supportstabilization region 802, to the aerosol may include aerosol-spraying,atomizing (e.g. by a nozzle), nebulizing, electro-spraying and/orvibration-aerosol-generation.

In general, the particles may be dry deposited (e.g. as solid particles,e.g. as powder, without another viscous material) or wet deposited (e.g.as viscous particles or together with a viscous, e.g. liquid, material).For example, the particles may be aerosol-deposited (e.g. coated) on thesupport stabilization region 802 and/or form at least one sacrificiallayer 102 l, e.g. one or more sacrificial layers 102 l, of thesacrificial support region 102 p and/or on the support stabilizationregion 802. Additionally or alternatively, the particles may bedeposited otherwise, e.g. from a suspension (e.g. gel or paste) and/orusing dipping, spreading or spinning, or the like.

Optionally, the particles and/or the at least one sacrificial layer 102l may be adhered to the support stabilization region 802 e.g. by anadhesion material (e.g. a viscous, e.g. liquid, adhesion material), e.g.deposited from the aerosol (e.g. in case of a wet aerosol-deposition) oras part of a respective adhesion layer (e.g. including pre-depositedadhesion material) formed before the exposing to the aerosol (e.g. incase of a dry aerosol-deposition). The adhesion material may bedeposited in solid (e.g. in form of particles) or viscous (e.g. liquid)form.

Optionally, the particles and/or the at least one sacrificial layer maybe heated, e.g. during or after exposing to the aerosol. Heating theparticles (e.g. a powder deposited and/or dry deposited) and/or the atleast one sacrificial layer 102 l may, for example, include at leastpartially melting the particles and/or the at least one sacrificiallayer 102 l, e.g. in case of including a polymer or a metal melting atlow temperature, e.g. like lead and indium. Additionally oralternatively, a viscous material (e.g. the adhesion material and/orviscous particles) may be solidified by or after heating. For example,the adhesion material may form (by heating) a matrix (e.g. a polymermatrix) in which the particles are embedded and/or may form a porouslayer including the particles.

Additionally or alternatively to melting, the particles (e.g. a powderdeposited and/or dry deposited) and/or the at least one sacrificiallayer 102 l may be sintered (by heating), e.g. in case of including ametal melting at high temperature, e.g. like silver, aluminum, copperand gold. After sintering and/or melting (in case of particles alsoreferred as to densifying), pores may remain in the at least onesacrificial layer 102 l indicating the fabrication process (e.g. theheating and/or densifying). For example, a porosity of the at least onesacrificial layer 102 l may be greater than a porosity (if present) ofthe support stabilization region 802.

Additionally or alternatively to the aerosol-depositing, the particlesand/or the at least one sacrificial layer 102 l may be molded at leastpartially. Additionally or alternatively to the aerosol-depositing, theat least one sacrificial layer 102 l may be formed from at least onefoil, e.g. by laminating the at least one foil to the workpiece-support102 s (e.g. its support stabilization region 802). Additionally oralternatively to the aerosol-depositing, the at least one sacrificiallayer 102 l may be formed by pressing the foil (e.g. including or formedfrom a polymer) and/or the particles on the workpiece-support 102 s(e.g. its support stabilization region 802) and optionally sintering ormelting the particles.

The workpiece-support 102 s (e.g. its support stabilization region 802)may, for example, include or be formed from a material having a lowthermal expansion coefficient, e.g. invar, super-invar, a ceramic and/orglass (e.g. a glass-ceramic, also referred as to ceran). For example,the thermal expansion coefficient of the workpiece-support 102 s (e.g.its support stabilization region 802) may be less than about 20·10⁻⁶K⁻¹, e.g. less than about 10·10⁻⁶ K⁻¹, e.g. less than about 5·10⁻⁶ K⁻¹,e.g. less than about 2·10⁻⁶ K⁻¹.

According to various embodiments, the particles and/or the at least onesacrificial layer 102 l may include or be formed from a polymer (e.g.,organic or inorganic), e.g. at least one of synthetic rubber, a resin(e.g. epoxy, phenol formaldehyde resin or Bakelite), neoprene, nylon,polyvinyl chloride (PVC or vinyl), polystyrene, polyethylene (e.g.polyethylene terephthalate, also referred to as PET), polypropylene,polyacrylonitrile, PVB, silicone, or the like. Alternatively oradditionally, the particles and/or the at least one sacrificial layer102 l may include or be formed from a metallic material, e.g. having aMohs Hardness of less than about 4, e.g. of less than about 3, e.g. ofless than about 2.5, e.g. of less than about 2, e.g. of less than about1.5, e.g. of less than about 1. For example, the metallic material ofthe particles and/or the at least one sacrificial layer 102 l mayinclude at least one of the following metals: lead, indium, silver,aluminum, copper and gold.

According to various embodiments, the particles and/or the at least onesacrificial layer 102 l may be disposed (e.g. coated) on the (e.g. all)protrusions 704 and/or in the (e.g. all) recesses 414 r of theworkpiece-support 102 s, e.g. forming a closed coating. For example, theparticles and/or the at least one sacrificial layer 102 l may cover morethan about 50% of the second side 800 b and/or of the supportstabilization region 802, e.g. more than about 75%, e.g. more than about90%.

The method may optionally include in 2300 a, e.g. as part of theproviding the workpiece-support 102 s, removing the at least oneplanarized portion 102 p′ or cleaning the support stabilization region802, e.g. prior to 2300 b. For example, the method may optionallyinclude in 2300 a removing the at least one sacrificial layer 102 l(e.g. after planarizing). The removing or cleaning may include etching(e.g. wet etching) and/or heating the workpiece-support 102 s. Heatingthe workpiece-support 102 s may include, for example, ashing orvaporizing the at least one sacrificial layer 102 l (also referred assacrificial coating 102 l ).

Further, various embodiments will be described in the following.

According to various embodiments, a workpiece planarization arrangement,may include: a chuck including: a support carrier (e.g., including asupply terminal for workpiece adhesion supply); and a workpiece-supportreplaceably mounted on the support carrier; and a planarization toolconfigured to planarize the at least one portion of theworkpiece-support and to planarize one or more workpieces on the atleast one portion of the workpiece-support, e.g. on the chuck(illustratively, for adjusting the chuck by self-planarization).

According to various embodiments, a mechanical hardness of the at leastone portion of the workpiece-support may be less than a mechanicalhardness of the support carrier.

According to various embodiments, a workpiece planarization arrangement,may include: a chuck including: a support carrier (e.g., including asupply terminal for workpiece adhesion supply); and a workpiece-supportreplaceably mounted on the support carrier; wherein a mechanicalhardness of the at least one portion of the workpiece-support is lessthan a mechanical hardness of the support carrier; and a planarizationtool configured to planarize the at least one portion of theworkpiece-support and to planarize one or more workpieces on the atleast one portion of the workpiece-support, e.g. on the chuck(illustratively, for adjusting the chuck by self-planarization).

According to various embodiments, a workpiece planarization arrangementmay include: a chuck; and a planarization tool configured to planarizethe chuck and to planarize one or more workpieces on the chuck(illustratively, for adjusting the chuck by self-planarization); whereina mechanical hardness of at least one portion of the chuck to beplanarized is less than at least one of: five times a mechanicalhardness of at least one portion to be planarized of the one or moreworkpieces; and a mechanical hardness at least one of a nickel-basedalloy and an iron-based alloy.

According to various embodiments, the planarization tool may beconfigured to planarize one or more workpieces when they are disposed onthe chuck (illustratively, placed on the chuck).

According to various embodiments, a chuck may include: a support carrier(e.g., including a supply terminal for workpiece adhesion supply); and aworkpiece-support replaceably mounted on the support carrier; wherein amechanical hardness of the at least one portion of the workpiece-supportis less than a mechanical hardness of the support carrier.

According to various embodiments, a chuck may include: a first sideconfigured to be mounted to a chuck holder (e.g., to a chuck socket); asupport carrier (e.g., including a supply terminal for workpieceadhesion supply) proximate to the first side;

a second side opposite the first side, wherein the second side isconfigured to support (e.g. face) one or more workpieces; and aworkpiece-support proximate to the second side (e.g. distant from thesupport carrier) and replaceably mounted on the support carrier.

According to various embodiments, a mechanical hardness of the at leastone portion of the workpiece-support may be less than a mechanicalhardness of the support carrier.

According to various embodiments, a replaceable workpiece-support (e.g.for a chuck) may include: a first side configured to be replaceablymounted to a support carrier (e.g., including a supply terminal forworkpiece adhesion supply) of the chuck; a second side opposite thefirst side, wherein the second side is configured to support (e.g. face)one or more workpieces; and at least one through hole extending from thefirst side to the second side such that one or more workpieces receivedover the second side is adhered by suction when a vacuum is created inthe at least one through hole; and

wherein a mechanical hardness of at least one portion theworkpiece-support proximate to the second side (e.g. distant from thesupport carrier) is less than a mechanical hardness of at least one of anickel-based alloy and an iron-based alloy (illustratively, foradjusting the chuck by planarizing the sacrificial support region).

According to various embodiments, a replaceable workpiece-support (e.g.for a chuck) may include: a first side configured to be replaceablymounted to a support carrier (e.g., including a supply terminal forworkpiece adhesion supply) of the chuck; a second side opposite thefirst side, wherein the second side is configured to support (e.g. face)one or more workpieces; and at least one through hole extending from thefirst side to the second side such that one or more workpieces receivedover the second side is adhered by suction when a vacuum is created inthe at least one through hole; and wherein at least one portion theworkpiece-support proximate to the second side (e.g. distant from thesupport carrier) includes a polymer.

According to various embodiments, the mechanical hardness may be inaccordance with the same measurement method.

According to various embodiments, the planarization tool may include abit carrier rotatable about a rotation axis; wherein the workpieceplanarization arrangement is configured to move at least one of the bitcarrier and the chuck along a direction perpendicular to the rotationaxis.

According to various embodiments, the planarization tool may include: arotatable bit carrier; and a machining bit mounted on the bit carrier;wherein the rotatable bit carrier and the chuck are configured for atwo-axis displacement to each other.

According to various embodiments, a mechanical hardness of the machiningbit may be greater than the mechanical hardness of at least one of thesupport carrier and the workpiece-support.

According to various embodiments, the machining bit may include or beformed from carbon.

According to various embodiments, the machining bit may include or beformed from at least one of a carbide and a nitride.

According to various embodiments, a mechanical hardness of the machiningbit is more than (in other words, greater than) a mechanical hardness ofat least one of the chuck and the one or more workpieces.Illustratively, the machining bit may include or be formed from amaterial, which is sufficiently hard to planarize the one or moreworkpieces and the chuck.

According to various embodiments, the machining bit may include or beformed from carbon in at least one of a carbide (e.g., a metal carbidelike tungsten carbide), a diamond configuration and a diamond-likecarbon configuration.

According to various embodiments, the machining bit may include or beformed from a ceramic.

According to various embodiments, the planarization tool may beconfigured to planarize at least one of the workpiece-support and theone or more workpieces by subtractive manufacturing (including at leastone of cutting and machining).

According to various embodiments, the support carrier may include atleast one vacuum line for connecting to a vacuum creating system;wherein the workpiece-support may include at least one through holeconnected to the at least one vacuum line (such that one or moreworkpieces on the workpiece-support is adhered by suction when a vacuumis created via the at least one vacuum line).

According to various embodiments, the workpiece-support may include arecess connected to the at least one through hole.

According to various embodiments, the support carrier may include aplurality of vacuum lines; wherein the workpiece-support may include aplurality of adhesion regions separated from each other, wherein eachadhesion region of the plurality of adhesion regions may include atleast one through hole; wherein the at least one through hole of eachadhesion region of the plurality of adhesion regions is connected to atleast one vacuum line of the plurality of vacuum lines (such thatadhering one or more workpieces is controllable by selectively providingvacuum to the adhesion region via the at least one vacuum line).

According to various embodiments, the at least one adhesion region ofthe plurality of adhesion regions may include a recess connected to theat least one through hole of the adhesion region of the plurality ofadhesion regions.

According to various embodiments, the at least one portion may bedistant from the support carrier; wherein the workpiece-support mayinclude at least one further portion (e.g. including or formed from astabilization region) proximate to the support carrier (and therespective the second side); and wherein a mechanical hardness of the atleast one further portion is greater than the mechanical hardness of theat least one portion.

According to various embodiments, a support surface of the at least oneportion may be configured to provide physical contact to one or moreworkpieces on the chuck.

According to various embodiments, the mechanical hardness may include orbe formed from a spatially averaged mechanical hardness.

According to various embodiments, the workpiece-support may include asupport stabilization region for stabilizing the sacrificial supportregion, wherein the stabilization region is disposed on the second side.

According to various embodiments, the support stabilization region maybe disposed between the sacrificial support region and the supportcarrier.

According to various embodiments, the at least one portion may includeor be formed from at least one of a foil (e.g. a tape), a layer (e.g. acoating) and a plate.

According to various embodiments, the at least one portion may includeparticles or be formed from particles and/or an aerosol.

According to various embodiments, the support carrier may include arecess for receiving the workpiece-support.

According to various embodiments, the mechanical hardness of the atleast one portion of the workpiece-may be is less than a mechanicalhardness of at least one of a nickel-based alloy and an iron-basedalloy.

According to various embodiments, the at least one portion of theworkpiece-support is proximate to a second side of the workpiece-supportconfigured to support one or more workpieces and/or includes one or moreprotrusions.

According to various embodiments, the mechanical hardness of the atleast one portion of the workpiece-support is less than a mechanicalhardness of an electroless nickel plating.

According to various embodiments, the electroless nickel plating mayrefer to a plating process using a reducing agent, for example hydratedsodium hypophosphite which reacts with the metal ions (nickel) todeposit the electroless nickel plating. The electroless nickel platingmay include a phosphorus concentration in the range from about 2 atomicpercent (low phosphorus) to about 14 atomic percent, e.g. in the rangefrom about 5 atomic percent to about 11 atomic percent.

According to various embodiments, the mechanical hardness of theworkpiece-support may be less than a mechanical hardness of at least oneof a nickel-phosphorus alloy and an iron-based alloy.

According to various embodiments, the at least one portion of theworkpiece-support may include or be formed from a polymer.

According to various embodiments, the workpiece-support may include orbe formed from a polymer.

According to various embodiments, the chuck may include or be formedfrom a polymer.

According to various embodiments, the support carrier may include or beformed from a metallic material (having the mechanical hardness of thesupport carrier).

According to various embodiments, the workpiece-support may be a plate(e.g. a disc).

According to various embodiments, the at least one portion of theworkpiece-support may protrude from the support carrier.

According to various embodiments, the at least one portion of theworkpiece-support may be configured to be subtractively manufactured toplanarize the workpiece-support.

According to various embodiments, a method for planarizing one or moreworkpieces may include: at least one of mounting and demounting aworkpiece-support of a chuck (e.g. replacing, in other words, demountinga first workpiece-support mounting and mounting a secondworkpiece-support); planarizing the workpiece-support using aplanarization tool; disposing one or more workpieces over theworkpiece-support after the planarizing the workpiece-support; andplanarizing the one or more workpieces using the planarization tool.

According to various embodiments, a method for adjusting a workpieceplanarization arrangement including a chuck and a planarization tool,wherein the chuck includes: a support carrier (e.g., including a supplyterminal for workpiece adhesion supply); a workpiece-support beingreplaceably mounted to the support carrier; the method may include: atleast one of mounting and demounting (e.g. replacing) theworkpiece-support of a chuck; and planarizing the workpiece-support bythe planarization tool.

According to various embodiments, a mechanical hardness of theworkpiece-support is less than a mechanical hardness of the supportcarrier.

According to various embodiments, a method for adjusting a workpieceplanarization arrangement including a chuck and a planarization tool,wherein the chuck includes: a support carrier (e.g., including a supplyterminal for workpiece adhesion supply); a workpiece-support beingreplaceably mounted to the support carrier; the method may include: atleast one of mounting and demounting (e.g. replacing) theworkpiece-support of a chuck; and planarizing the workpiece-support bythe planarization tool.

According to various embodiments, a mechanical hardness of theworkpiece-support is less than a mechanical hardness of the supportcarrier.

According to various embodiments, a method for adjusting a workpieceplanarization arrangement including a chuck and a planarization tool,wherein the chuck includes: a support carrier (e.g., including a supplyterminal for workpiece adhesion supply); a workpiece-support beingreplaceably mounted to the support carrier; wherein a mechanicalhardness of the workpiece-support is less than a mechanical hardness ofthe support carrier, the method may include: at least one of mountingand demounting (e.g. replacing) the workpiece-support of a chuck; andplanarizing the workpiece-support by the planarization tool.

According to various embodiments, a method for planarizing one or moreworkpieces may include: planarizing at least one portion of aworkpiece-support using a planarization tool; disposing one or moreworkpieces over the workpiece-support after the planarizing theworkpiece-support; and planarizing at least one portion of the workpieceusing the planarization tool; wherein a hardness of the at least oneportion of the workpiece-support is configured such that the planarizingthe workpiece-support and the planarizing the at least one portion ofthe one or more workpieces (in other words, of the workpiece or eachworkpiece) use at least one of the planarization tool in the samephysical configuration (e.g. without modification or reconfiguration)and the same machining bit configuration (e.g. without modification orreconfiguration).

According to various embodiments, a method for planarizing one or moreworkpieces may include: planarizing at least one portion of aworkpiece-support using a planarization tool for forming a planarizedsupport surface of the workpiece-support; disposing one or moreworkpieces over the planarized surface of the workpiece-support; andplanarizing at least one portion of the one or more workpieces using theplanarization tool for forming a planarized workpiece surface of the oneor more workpieces; wherein a hardness of the at least one portion ofthe workpiece-support is configured such that the planarizing theworkpiece-support and the planarizing the one or more workpieces use atleast one of the same physical configuration of the planarization tooland the same machining bit configuration (e.g. without modification orreconfiguration).

According to various embodiments, a method for adjusting a workpieceplanarization arrangement including a chuck and a planarization tool,wherein the chuck includes a support carrier (e.g., including a supplyterminal for workpiece adhesion supply) and a workpiece-support beingreplaceably mounted to the support carrier (wherein a mechanicalhardness of the workpiece-support is optionally less than a mechanicalhardness of the support carrier) may include: providing a workpieceplanarization configuration of the planarization tool (e.g., itsmachining bit) in which the planarization tool is configured toplanarize one or more workpieces on the workpiece-support; andplanarizing the workpiece-support by the planarization tool in theworkpiece planarization configuration.

According to various embodiments, the mechanical hardness of the atleast one portion of the workpiece-support may be within a range ofabout 20% to about 500% of the mechanical hardness of the at least oneportion of the one or more workpieces, e.g. within a range of about 50%to about 200% of the mechanical hardness of the at least one portion ofthe one or more workpieces.

According to various embodiments, a relative deviation of the mechanicalhardness of the at least one portion of the workpiece-support and themechanical hardness of the at least one portion of the one or moreworkpieces may be less than about 100% (e.g. less than about 75%, e.g.less than about 50%, e.g. less than about 25%, e.g. less than about 10%,e.g. less than about 5%, e.g. less than about 2%). The relativedeviation of two numerical values may be defined by their (positive, inother words, natural) difference from each other divided by theirarithmetic mean. The arithmetic mean (also referred to as mean oraverage) may be defined as being equal to the sum of the numericalvalues divided by two.

According to various embodiments, the support carrier of the chuck isoptional. In this case, the chuck may be configured similar to theworkpiece-support.

According to various embodiments, the mechanical hardness of the atleast one portion of the chuck (planarized or to be planarized) may bewithin a range of about 20% to about 500% of the mechanical hardness ofthe at least one portion of the one or more workpieces (planarized or tobe planarized), e.g. within a range of about 50% to about 200% of themechanical hardness of the at least one portion of the one or moreworkpieces.

According to various embodiments, the mechanical hardness of the atleast one portion of the chuck (planarized or to be planarized) may bewithin a range of about 20% to about 500% of the mechanical hardness ofthe at least one portion of the one or more workpieces (planarized or tobe planarized), e.g. within a range of about 50% to about 200% of themechanical hardness of the at least one portion of the one or moreworkpieces.

According to various embodiments, replaceably mounted may be understoodmounting configured for a nondestructive disassembly.

According to various embodiments, a workpiece planarization arrangementmay include: a chuck including at least one portion configured tosupport one or more workpieces and/or including one or more protrusions;and a planarization tool configured to planarize the at least oneportion of the chuck and to planarize one or more workpieces on the atleast one portion of the chuck; wherein a mechanical hardness of the atleast one portion of the chuck is configured such that planarizing theone or more workpieces and planarizing the at least one portion of thechuck use (in other words, may be carried out by) the planarization toolin the same machining bit configuration, e.g., the machining bit in thesame physical configuration.

According to various embodiments, the planarization tool may beconfigured to planarize the one or more workpieces if they are disposedon the chuck (illustratively, placed on the chuck).

According to various embodiments, planarization tool may include: a bitcarrier rotatable about a rotation axis; wherein the planarization tooland the chuck are configured for a displacement to each other parallelto a direction perpendicular the rotation axis.

According to various embodiments, a mechanical hardness of the machiningbit is more than (in other words, greater than) a mechanical hardness ofat least one of the chuck and the one or more workpieces.Illustratively, the machining bit may include or be formed from amaterial, which is sufficient hard to planarize the one or moreworkpieces and the chuck.

According to various embodiments, the machining bit may include or beformed from carbon in at least one of a carbide (e.g., a metal carbidelike tungsten carbide), a diamond configuration and a diamond-likecarbon configuration.

According to various embodiments, the machining bit may include or beformed from a ceramic.

According to various embodiments, the chuck may include at least onevacuum line for connecting to a vacuum creating system; wherein the atleast one portion of the chuck may include at least one through holeconnected to the at least one vacuum line.

According to various embodiments, the chuck may include a plurality ofvacuum lines; wherein the at least one portion of the chuck may includea plurality of adhesion regions separated from each other, wherein eachadhesion region of the plurality of adhesion regions may include atleast one through hole; wherein the at least one through hole of eachadhesion region of the plurality of adhesion regions is connected to atleast one vacuum line of the plurality of vacuum lines.

According to various embodiments, the at least one portion of the chuckmay be proximate to a side of the chuck (e.g. configured to support oneor more workpieces, e.g. respectively face the one or more workpieces,and/or including one or more protrusions); wherein the chuck may includeat least one further portion distant from the side; and wherein amechanical hardness of the at least one further portion of the chuck maybe greater than a mechanical hardness of the at least one portion of thechuck.

According to various embodiments, the at least one further portion mayinclude or be formed from a metallic material.

According to various embodiments, the at least one portion of the chuckmay protrude from the at least one further portion.

According to various embodiments, the at least one portion may includeor be formed from at least one of a foil, a layer (e.g. a coating) and aplate.

According to various embodiments, the at least one portion may includeparticles or be formed from particles and/or an aerosol.

According to various embodiments, the mechanical hardness of the atleast one portion of the chuck is less than a mechanical hardness of atleast one of a nickel-based alloy and an iron-based alloy.

According to various embodiments, the at least one portion of the chuckmay include or be formed from a polymer.

According to various embodiments, the planarizing the one or moreworkpieces and the planarizing the at least one portion of the chuckdiffer in a speed (e.g., by more than about 10%, 20%, or 30% and/or byless than about 90%, 75% or 50%) of at least one of: a rotation of theplanarization tool, a displacement between the chuck and theplanarization tool, a revolution of a machining bit of the planarizationtool.

According to various embodiments, a chuck may include: a first sideconfigured to be mounted to a chuck holder (e.g., to a chuck socket); asecond side opposite the first side, wherein the second side isconfigured to support (e.g. face) one or more workpieces; at least onevacuum line for connecting to a vacuum creating system; and at least oneportion proximate to the second side (e.g. distant from the supportcarrier) including at least one through hole connected to the at leastone vacuum line such that one or more workpieces received over thesecond side is adhered by suction when a vacuum is created in the atleast one vacuum line; wherein a mechanical hardness of the at least oneportion proximate to the second side (e.g. distant from the supportcarrier) is configured such that planarizing the one or more workpiecesand planarizing the at least one portion use at least one of aplanarization tool and a machining bit in the same physicalconfiguration.

According to various embodiments, the chuck may include at least onevacuum line for connecting to a vacuum creating system; wherein the atleast one portion of the chuck may include at least one through holeconnected to the at least one vacuum line.

According to various embodiments, at least two vacuum lines may bedecoupled from each other.

According to various embodiments, the at least one portion may bedistant from the first side; wherein the chuck may include at least onefurther portion proximate to the first side; and wherein a mechanicalhardness of the at least one further portion is greater than themechanical hardness of the at least one portion.

According to various embodiments, the at least one further portion mayinclude or be formed from a metallic material.

According to various embodiments, the at least one portion may includeor be formed from at least one of a foil, a layer (e.g. a coating) and aplate.

According to various embodiments, the at least one portion may includeparticles or be formed from particles and/or an aerosol.

According to various embodiments, the mechanical hardness of the atleast one portion of the chuck may be less than a mechanical hardness ofat least one of a nickel-based alloy and an iron-based alloy.

According to various embodiments, the at least one portion of the chuckmay include or be formed from a polymer.

According to various embodiments, the planarizing the one or moreworkpieces and the planarizing the at least one portion of the chuck maydiffer in a speed of at least one of: a rotation of the planarizationtool, a displacement between the chuck and the planarization tool, arevolution of a machining bit of the planarization tool.

According to various embodiments, a method for planarizing one or moreworkpieces may include: planarizing at least one portion of a chuckusing a planarization tool; disposing one or more workpieces over the atleast one portion of the chuck after the planarizing the at least oneportion of the chuck; and planarizing the one or more workpieces usingthe planarization tool; wherein a mechanical hardness of the at leastone portion of the chuck is configured such that the planarizing the oneor more workpieces and the planarizing the at least one portion of thechuck use the planarization tool in the same machining bitconfiguration, e.g., the machining bit in the same physicalconfiguration.

According to various embodiments, a method for planarizing one or moreworkpieces, the method including: planarizing at least one portion of achuck using a planarization tool for forming a planarized supportsurface of the chuck; disposing one or more workpieces over theplanarized surface of the chuck; and planarizing the one or moreworkpieces using the planarization tool for forming a planarizedworkpiece surface of the one or more workpieces; wherein a mechanicalhardness of the at least one portion of the chuck is configured suchthat the planarizing the one or more workpieces and the planarizing theat least one portion of the chuck use the planarization tool in the samemachining bit configuration, e.g., the machining bit in the samephysical configuration.

According to various embodiments, a method for adjusting a workpieceplanarization arrangement including a chuck and a planarization tool,wherein a mechanical hardness of the at least one portion of the chuckis configured such that the planarizing the one or more workpieces andthe planarizing the at least one portion of the chuck use theplanarization tool in the same configuration, may include: providing amachining bit configuration (e.g., in a workpiece planarizationconfiguration) of the planarization tool in which the planarization toolis configured to planarize one or more workpieces on theworkpiece-support; and planarizing the at least one portion of the chuckby the planarization tool in the machining bit configuration (e.g., inthe workpiece planarization configuration).

According to various embodiments, the workpiece planarizationarrangement may include a socket (also referred to as chuck socket) formounting the chuck. The chuck socket may optionally include a vacuumcreating system (e.g., including at least one pump, e.g., at least onevacuum pump) for creating a vacuum in the chuck. In various embodiments,the chuck may be mounted at the chuck socket or at least configured tobe mounted at the chuck socket. For example, the chuck socket mayinclude or be formed from a stand on which the chuck is mounted. In oneor more embodiments, the chuck may protrude from the chuck socket (e.g.,at least one of laterally and vertically). In one or more embodiments,the chuck may include a planar surface (e.g., including openings for theat least one through hole). In one or more embodiments, the chuck andthe chuck socket may be coupled to each other air-tight (in other words,vacuum tight, e.g., by a sealing). Alternatively or additionally, theworkpiece-support and the support carrier may be coupled to each otherair-tight (in other words, vacuum tight, e.g., by a sealing). In one ormore embodiments, at least one of the chuck and the chuck socket may bemetallic. In one or more embodiments, at least one of the chuck and theworkpiece-support may be non-metallic. In one or more embodiments, theworkpiece-support may protrude from the support carrier (e.g.,laterally). In one or more embodiments, at least one of the supportcarrier, the chuck and the workpiece-support may be formed plate-like.For example, at least one of the support carrier, the chuck and theworkpiece-support may include or be formed from a plate. The chucksocket may include or be formed from a table. The workpiece-support mayinclude or be formed from an inlay.

According to various embodiments, the workpiece planarizationarrangement may further include a chuck holder, wherein the supportcarrier may be configured to be mounted to the chuck holder.

According to various embodiments, the chuck holder may include or beformed from a chuck socket.

According to various embodiments, the chuck, e.g., its support carrier,may include a supply terminal for workpiece adhesion supply. The supplyterminal may include or be formed from at least one of one or moreelectric connectors and one or more vacuum connectors. The supplyterminal may remain connected to a supply device during replacing theworkpiece-support. This may enable fast and economic replacement of theworkpiece-support, e.g., if the workpiece-support is thinned down to acertain degree or thickness (in other words, consumed).

In one or more embodiments, the chuck and the workpiece may beplanarized in the same machining bit configuration. Using the samemachining bit configuration may provide a reproducible transfer of theplanarization plane from the chuck to the workpiece. Other parameters(e.g., speed of second displacement, speed of revolving the machiningbit and/or contact pressure between chuck and planarization tool) maydiffer between planarizing the chuck and planarizing the workpiece. Inone or more other embodiments, at least one of: the speed of seconddisplacement, speed of revolving the machining bit and contact pressurebetween chuck and planarization tool may be the same for planarizing thechuck and planarizing the workpiece. The machining bit configuration maybe defined by the used machining bit and its spatial configuration,e.g., at least one of position and orientation. For example, themachining bit may be maintained between planarizing the chuck andplanarizing the workpiece. Alternatively or additionally, the spatialconfiguration of the machining bit may be maintained between planarizingthe chuck and planarizing the workpiece. In other words, the samemachining bit configuration may be understood as using the machining bitin the same physical configuration for both, planarizing the chuck andplanarizing the workpiece.

According to various embodiments, the planarization tool may include orbe formed from a machining bit configured to revolve about a rotationaxis; wherein the planarization tool and the chuck are configured to bedisplaceable relative to each other in a direction perpendicular to therotation axis (in other words displaceable along axes parallel to eachother, wherein the parallel axes are aligned perpendicular to therotation axis).

According to various embodiments, a method for planarizing one or moreworkpieces may include: planarizing at least one portion of a chuckusing a planarization tool; disposing one or more workpieces over the atleast one portion of the chuck after the planarizing the at least oneportion of the chuck; and planarizing the one or more workpieces usingthe planarization tool; and coating or forming the at least one portionof the chuck using an aerosol (e.g. by exposing to the aerosol).

According to various embodiments, a method for planarizing aworkpiece-support may include: planarizing at least one portion of theworkpiece-support using a planarization tool; and coating or forming theat least one portion of the workpiece-support (e.g. including one ormore protrusions of the workpiece-support) using an aerosol (e.g. byexposing to the aerosol).

According to various embodiments, a workpiece planarization arrangement,may include: a chuck including at least one portion configured tosupport one or more workpieces; and a planarization tool configured toplanarize the at least one portion of the chuck and to planarize one ormore workpieces on the at least one portion of the chuck; wherein the atleast one portion of the chuck includes at least one of particles (e.g.particle residuals), pores and/or a polymer.

According to various embodiments, the planarization tool may include: amachining bit configured to revolve about a rotation axis; wherein theplanarization tool and the chuck are configured displaceable (in otherwords for a displacement) to each other parallel to a directionperpendicular to the rotation axis (in other words displaceable alongaxes parallel to each other, wherein the parallel axes are alignedperpendicular to the rotation axis).

According to various embodiments, a mechanical hardness of the machiningbit may be more than a mechanical hardness of at least one of the chuckand the one or more workpieces.

According to various embodiments, the chuck may include at least onevacuum line for connecting to a vacuum creating system; wherein the atleast one portion of the chuck includes at least one through holeconnected to the at least one vacuum line.

According to various embodiments, a mechanical hardness of the at leastone portion of the chuck is configured such that planarizing the one ormore workpieces and planarizing the at least one portion of the chuckuse the planarization tool in the same machining bit configuration.

According to various embodiments, the chuck may include a plurality ofvacuum lines; wherein the at least one portion of the chuck may includea plurality of adhesion regions separated from each other, wherein eachadhesion region of the plurality of adhesion regions includes at leastone through hole; wherein the at least one through hole of each adhesionregion of the plurality of adhesion regions is connected to at least onevacuum line of the plurality of vacuum lines.

According to various embodiments, the at least one portion of the chuckis proximate to a side of the chuck configured to support one or moreworkpieces; wherein the chuck may include at least one further portiondistant from the side; and wherein a mechanical hardness of the at leastone further portion of the chuck may be greater than a mechanicalhardness of the at least one portion of the chuck.

According to various embodiments, the at least one further portion mayinclude or be formed from a metallic material and/or a ceramic material(e.g. having a greater hardness than the at least one portion).

According to various embodiments, the at least one portion of the chuckmay have a higher porosity than the at least one further portion of thechuck.

According to various embodiments, the at least one portion of the chuckmay have a higher particle-density than the at least one further portionof the chuck.

According to various embodiments, the at least one portion of the chuckmay have a smaller melting temperature or glass transition temperaturethan the at least one further portion of the chuck.

According to various embodiments, the at least one portion of the chuckmay have more protrusions than the at least one further portion of thechuck.

According to various embodiments, the at least one portion of the chuckmay a greater thermal expansion than the at least one further portion ofthe chuck.

According to various embodiments, the at least one portion of the chuckmay have a smaller mechanical hardness than the at least one furtherportion of the chuck.

According to various embodiments, a thermal expansion coefficient of theat least one further portion may be less than about 1·10⁻⁵/K, e.g. lessthan about 5·10⁻⁶/K, e.g. less than about 2·10⁻⁶/K, e.g. less than about1·10⁻⁶/K, e.g. less than about 5·10⁻⁷/K, e.g. less than about 2·10⁻⁷/K.

According to various embodiments, the particles may be embedded in thepolymer or form a matrix in which the pores (void-spaces) are embedded.

According to various embodiments, the at least one portion may includeor be formed from at least one of: at least one foil including or formedfrom the polymer, at least one (e.g. porous) layer including the poresand/or the particles; and a composite material including the polymer andthe particles embedded in the polymer.

According to various embodiments, the at least one portion may includeone or more protrusions and at least one layer (e.g. a foil or a porouslayer), wherein the at least one layer includes at least one of thepolymer, the pores and the particles, wherein the at least one layer(e.g. at least partially, in other words partially or completely) coversthe one or more protrusions, e.g. at least a top portion of eachprotrusion of the one or more protrusions.

According to various embodiments, the polymer may include or be formedfrom a thermoplastic polymer or a duroplastic polymer (e.g. resin).

According to various embodiments, the thermoplastic polymer may includeor be formed from Acrylic, Acrylonitrile butadiene styrene, Nylon,Polylactic acid, Polybenzimidazole, Polycarbonate, Polyether sulfone,Polyetherether ketone, Polyetherimide, Polyethylene, Polyphenyleneoxide, Polyphenylene sulfide, Polypropylene, Polystyrene, Polyvinylchloride and/or Teflon.

According to various embodiments, a workpiece planarization arrangementmay include or be formed from: a chuck including at least one portionconfigured to support one or more workpieces; and a planarization toolconfigured to planarize the at least one portion of the chuck and toplanarize one or more workpieces on the at least one portion of thechuck; wherein the at least one portion of the chuck includes or isformed from at least one of: particles (e.g. particle residuals), poresand/or a polymer; wherein a mechanical hardness of the at least oneportion of the chuck is configured such that planarizing the one or moreworkpieces and planarizing the at least one portion of the chuck use theplanarization tool in the same machining bit configuration.

According to various embodiments, a chuck may include: a first sideconfigured to be mounted to a chuck holder; a second side opposite thefirst side, wherein the second side is configured to support one or moreworkpieces; at least one vacuum line for connecting to a vacuum creatingsystem; and at least one portion proximate to the second side includingat least one through hole connected to the at least one vacuum line suchthat one or more workpieces received over the second side is adhered bysuction when a vacuum is created via (e.g. through and/or in) the atleast one vacuum line; wherein the at least one portion proximate to thesecond side includes at least one of particles (e.g. particleresiduals), pores and/or a polymer.

According to various embodiments, the at least one portion is distantfrom the first side; wherein the chuck may include at least one furtherportion proximate to the first side; and wherein a mechanical hardnessof the at least one further portion is greater than the mechanicalhardness of the at least one portion.

According to various embodiments, the at least one further portion mayinclude or be formed from a metallic material and/or a ceramic material(e.g. having a greater hardness than the at least one portion).

According to various embodiments, a thermal expansion coefficient of theat least one further portion is less than 1·10⁻⁵/K, e.g. less than about5·10⁻⁶/K, e.g. less than about 2·10⁻⁶/K, e.g. less than about 1·10⁻⁶/K,e.g. less than about 5·10⁻⁷/K, e.g. less than about 2·10⁻⁷/K.

According to various embodiments, the particles may include or be formedfrom the polymer or a metal (e.g. having less hardness than a furtherportion of the workpiece support).

According to various embodiments, the at least one portion may includeor be formed from at least one of: at least one foil including or formedfrom the polymer, at least one (e.g. porous) layer including the poresand/or the particles, and a composite material including the polymer andthe particles embedded in the polymer.

According to various embodiments, the at least one portion may includeone or more protrusions and at least one layer (e.g. a foil or a porouslayer), wherein the at least one layer may include at least one of thepolymer, the pores and the particles, wherein the at least one layer(e.g. at least partially, in other words partially or completely) coversthe one or more protrusions, e.g. at least a top portion of eachprotrusion of the one or more protrusions.

According to various embodiments, a method for providing a planarizableworkpiece support may include: providing a chuck, including a first sideconfigured to be mounted to a chuck holder; a second side opposite thefirst side, and at least one vacuum line for connecting to a vacuumcreating system, wherein the second side is configured to support one ormore workpieces; and forming or reinforcing at least one portionproximate to the second side, the at least one portion including atleast one through hole connected to the at least one vacuum line suchthat one or more workpieces received over the second side are adhered bysuction when a vacuum is created via (e.g. through and/or in) the atleast one vacuum line; wherein forming or reinforcing may includeexposing the second side to an aerosol (e.g. solution free) or at leastone of molding, pressing or laminating a (e.g. metal free) material onthe second side (e.g. by dry deposition and/or solution free).

According to various embodiments, the method may further include:planarizing at least one portion of a chuck using a planarization tool;disposing one or more workpieces over the at least one portion of thechuck after the planarizing the at least one portion of the chuck; andplanarizing the one or more workpieces using the planarization tool.

Various embodiments may be configured similar or as at least one of thefollowing examples.

EXAMPLE 1

A workpiece planarization arrangement, including:

-   -   a chuck including at least one portion configured to support one        or more workpieces; and    -   a planarization tool configured to planarize the at least one        portion of the chuck and to planarize one or more workpieces on        the at least one portion of the chuck;    -   wherein a mechanical hardness of the at least one portion of the        chuck is configured such that planarizing the one or more        workpieces and planarizing the at least one portion of the chuck        use the planarization tool in the same machining bit        configuration.

EXAMPLE 2

The workpiece planarization arrangement of example 1, the planarizationtool including:

-   -   a machining bit configured to revolve about a rotation axis;    -   wherein the planarization tool and the chuck are configured        displaceable (in other words for a displacement) to each other        parallel to a direction perpendicular to the rotation axis.

EXAMPLE 3

The workpiece planarization arrangement of example 1,

-   -   wherein a mechanical hardness of the machining bit is more than        a mechanical hardness of at least one of the chuck and the one        or more workpieces.

EXAMPLE 4

The workpiece planarization arrangement of example 1,

-   -   wherein the chuck includes at least one vacuum line for        connecting to a vacuum creating system; and    -   wherein the at least one portion of the chuck includes at least        one through hole connected to the at least one vacuum line.

EXAMPLE 5

The workpiece planarization arrangement of example 1,

-   -   wherein the chuck includes a plurality of vacuum lines;    -   wherein the at least one portion of the chuck includes a        plurality of adhesion regions separated from each other, wherein        each adhesion region of the plurality of adhesion regions        includes at least one through hole;    -   wherein the at least one through hole of each adhesion region of        the plurality of adhesion regions is connected to at least one        vacuum line of the plurality of vacuum lines.

EXAMPLE 6

The workpiece planarization arrangement of example 1,

-   -   wherein the at least one portion of the chuck is proximate to a        side of the chuck configured to support one or more workpieces;    -   wherein the chuck includes at least one further portion distant        from the side; and wherein a mechanical hardness of the at least        one further portion of the chuck is greater than a mechanical        hardness of the at least one portion of the chuck.

EXAMPLE 7

The workpiece planarization arrangement of example 6,

-   -   wherein the at least one further portion includes a metallic        material.

EXAMPLE 8

The workpiece planarization arrangement of example 6,

-   -   wherein the at least one portion of the chuck protrudes from the        at least one further portion.

EXAMPLE 9

The workpiece planarization arrangement of example 6,

-   -   wherein the at least one portion of the chuck is replaceably        mounted to the at least one further portion.

EXAMPLE 10

The workpiece planarization arrangement of example 1,

-   -   wherein the at least one portion includes at least one of a        foil, a layer and a plate.

EXAMPLE 11

The workpiece planarization arrangement of example 1,

-   -   wherein a mechanical hardness of the at least one portion of the        chuck is less than a mechanical hardness of at least one of a        nickel-based alloy and an iron-based alloy.

EXAMPLE 12

The workpiece planarization arrangement of example 1,

-   -   wherein the at least one portion of the chuck includes a        polymer.

EXAMPLE 13

The workpiece planarization arrangement of example 1,

-   -   wherein the planarizing the one or more workpieces and the        planarizing the at least one portion of the chuck differ in a        speed of at least one of: a rotation of the planarization tool,        a displacement between the chuck and the planarization tool, a        revolution of a machining bit of the planarization tool.

EXAMPLE 14

A chuck, including:

-   -   a first side configured to be mounted to a chuck holder;    -   a second side opposite the first side, wherein the second side        is configured to support one or more workpieces;    -   at least one vacuum line for connecting to a vacuum creating        system; and    -   at least one portion proximate to the second side including at        least one through hole connected to the at least one vacuum line        such that one or more workpieces received over the second side        is adhered by suction when a vacuum is created via the at least        one vacuum line;    -   wherein a mechanical hardness of the at least one portion        proximate to the second side is configured such that planarizing        the one or more workpieces and planarizing the at least one        portion use a planarization tool in the same machining bit        configuration.

EXAMPLE 15

The chuck of example 14,

-   -   wherein the at least one portion is distant from the first side;    -   wherein the chuck includes at least one further portion        proximate to the first side; and    -   wherein a mechanical hardness of the at least one further        portion is greater than the mechanical hardness of the at least        one portion.

EXAMPLE 16

The chuck of example 15,

-   -   wherein the at least one further portion includes a metallic        material.

EXAMPLE 17

The chuck of example 14,

-   -   wherein the at least one portion includes at least one of a        foil, a layer and a plate.

EXAMPLE 18

The chuck of example 14,

-   -   wherein the mechanical hardness of the at least one portion of        the chuck is less than a mechanical hardness of at least one of        a nickel-based alloy and an iron-based alloy.

EXAMPLE 19

The chuck of example 14,

-   -   wherein the at least one portion of the chuck includes a        polymer.

EXAMPLE 20

A method for planarizing one or more workpieces, the method including:

-   -   planarizing at least one portion of a chuck using a        planarization tool;    -   disposing one or more workpieces over the at least one portion        of the chuck after the planarizing the at least one portion of        the chuck; and    -   planarizing the one or more workpieces using the planarization        tool;    -   wherein a mechanical hardness of the at least one portion of the        chuck is configured such that the planarizing the one or more        workpieces and the planarizing the at least one portion of the        chuck use the planarization tool in the same machining bit        configuration.

In one or more embodiments, the mechanical hardness of the at least oneportion (of the chuck) may be configured such that planarizing the oneor more workpieces and planarizing the at least one portion of the chuckuse the planarization tool in the same machining bit configuration.Additionally or alternatively, the at least one portion may include orbe formed from an at least one layer (also referred as to at least onesacrificial layer). The at least one sacrificial layer may, for example,be formed by exposing to an aerosol, molding a material (e.g. a polymer,e.g. a thermoplastic) disposed on the chuck (e.g. its supportstabilization region), laminating and/or pressing a material (e.g. afoil) on the chuck (e.g. its support stabilization region) or the like.The readily fabricated at least one sacrificial layer may include atleast one of the following: particles, a polymer and/or pores, e.g. moreof at least one of particles and/or pores than the support stabilizationregion and/or the further at least one portion.

While the invention has been particularly shown and described withreference to specific embodiments, it should be understood by thoseskilled in the art that various changes in form and detail may be madetherein without departing from the spirit and scope of the invention asdefined by the appended claims. The scope of the invention is thusindicated by the appended claims and all changes which come within themeaning and range of equivalency of the claims are therefore intended tobe embraced.

What is claimed is:
 1. A semiconductor workpiece planarizationarrangement, comprising: a chuck comprising at least one portionconfigured to support one or more semiconductor workpieces; and aplanarization tool configured to planarize the at least one portion ofthe chuck and to planarize one or more semiconductor workpieces on theat least one portion of the chuck; wherein the at least one portion ofthe chuck comprises at least one of granular particles, pores and/or apolymer.
 2. The semiconductor workpiece planarization arrangement ofclaim 1, the planarization tool comprising: a machining bit configuredto revolve about a rotation axis; wherein the planarization tool and thechuck are configured displaceable to each other parallel to a directionperpendicular to the rotation axis.
 3. The semiconductor workpieceplanarization arrangement of claim 1, wherein a mechanical hardness ofthe at least one portion of the chuck is configured such thatplanarizing the one or more semiconductor workpieces and planarizing theat least one portion of the chuck use the planarization tool in the samemachining bit configuration.
 4. The semiconductor workpieceplanarization arrangement of claim 1, wherein the chuck comprises atleast one vacuum line for connecting to a vacuum creating system; andwherein the at least one portion of the chuck comprises at least onethrough hole connected to the at least one vacuum line.
 5. Thesemiconductor workpiece planarization arrangement of claim 1, whereinthe chuck comprises a plurality of vacuum lines; wherein the at leastone portion of the chuck comprises a plurality of adhesion regionsseparated from each other, wherein each adhesion region of the pluralityof adhesion regions comprises at least one through hole; wherein the atleast one through hole of each adhesion region of the plurality ofadhesion regions is connected to at least one vacuum line of theplurality of vacuum lines.
 6. The semiconductor workpiece planarizationarrangement of claim 1, wherein the at least one portion of the chuck isproximate to a side of the chuck configured to support one or moresemiconductor workpieces; wherein the chuck comprises at least onefurther portion distant from the side; and wherein a mechanical hardnessof the at least one further portion of the chuck is greater than amechanical hardness of the at least one portion of the chuck.
 7. Thesemiconductor workpiece planarization arrangement of claim 6, whereinthe at least one further portion comprises a metallic material and/or aceramic material.
 8. The semiconductor workpiece planarizationarrangement of claim 6, wherein a thermal expansion coefficient of theat least one further portion is less than 1·10⁻⁵/K.
 9. The semiconductorworkpiece planarization arrangement of claim 1, wherein the granularparticles include the polymer or a metal.
 10. The semiconductorworkpiece planarization arrangement of claim 1, wherein the at least oneportion comprises at least one of at least one foil comprising thepolymer, at least one layer comprising the pores and/or the particles;and a composite material comprising the polymer and the particlesembedded in the polymer.
 11. The semiconductor workpiece planarizationarrangement of claim 1, wherein the at least one portion comprises oneor more protrusions and at least one layer, wherein the at least onelayer comprises at least one of the polymer, the pores and theparticles, wherein the at least one layer covers the one or moreprotrusions.
 12. A semiconductor workpiece planarization arrangement,comprising: a chuck comprising at least one portion configured tosupport one or more semiconductor workpieces; and a planarization toolconfigured to planarize the at least one portion of the chuck and toplanarize one or more semiconductor workpieces on the at least oneportion of the chuck; wherein the at least one portion of the chuckcomprises at least one of granular particles, pores and/or a polymer;wherein a mechanical hardness of the at least one portion of the chuckis configured such that planarizing the one or more semiconductorworkpieces and planarizing the at least one portion of the chuck use theplanarization tool in the same machining bit configuration.
 13. A chuck,comprising: a first side configured to be mounted to a chuck holder; asecond side opposite the first side, wherein the second side isconfigured to support one or more semiconductor workpieces; at least onevacuum line for connecting to a vacuum creating system; and at least oneportion proximate to the second side comprising at least one throughhole connected to the at least one vacuum line such that one or moresemiconductor workpieces received over the second side is adhered bysuction when a vacuum is created via the at least one vacuum line;wherein the at least one portion proximate to the second side comprisesat least one of granular particles, pores and/or a polymer.
 14. Thechuck of claim 13, wherein the at least one portion is distant from thefirst side; wherein the chuck comprises at least one further portionproximate to the first side; and wherein a mechanical hardness of the atleast one further portion is greater than the mechanical hardness of theat least one portion.
 15. The chuck of claim 14, wherein the at leastone further portion comprises a metallic material and/or a ceramicmaterial.
 16. The chuck of claim 14, wherein a thermal expansioncoefficient of the at least one further portion is less than 1·10⁻⁵/K.17. The chuck of claim 13, wherein the at least one portion comprises atleast one of at least one foil comprising the polymer, at least onelayer comprising the pores and/or the particles, and a compositematerial comprising the polymer and the particles embedded in thepolymer.
 18. The chuck of claim 13, wherein the at least one portioncomprises one or more protrusions and at least one layer, wherein the atleast one layer comprises at least one of the polymer, the pores and theparticles, wherein the at least one layer covers the one or moreprotrusions.
 19. A method for providing a planarizable workpiecesupport, the method comprising: providing a chuck, comprising a firstside configured to be mounted to a chuck holder; a second side oppositethe first side, and at least one vacuum line for connecting to a vacuumcreating system, wherein the second side is configured to support one ormore workpieces; and forming or reinforcing at least one portionproximate to the second side, the at least one portion comprising atleast one through hole connected to the at least one vacuum line suchthat one or more semiconductor workpieces received over the second sideare adhered by suction when a vacuum is created via the at least onevacuum line; wherein forming or reinforcing comprises exposing thesecond side to an aerosol or at least one of molding, pressing orlaminating a material on the second side.
 20. The method of claim 19,further comprising: planarizing the at least one portion of a chuckusing a planarization tool; disposing one or more semiconductorworkpieces over the at least one portion of the chuck after theplanarizing the at least one portion of the chuck; and planarizing theone or more semiconductor workpieces using the planarization tool.